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| 型号： | OPA659EVM |
| 厂商： | Texas Instruments |
| 文件页数： | 4/32页 |
| 文件大小： | 0K |
| 描述： | EVAL MODULE FOR OPA659 |
| 标准包装： | 1 |
| 每 IC 通道数： | 1 - 单 |
| 放大器类型： | J-FET |
| 转换速率： | 2550 V/µs |
| -3db带宽： | 650MHz |
| 电流 - 输出 / 通道： | 70mA |
| 工作温度： | -40°C ~ 85°C |
| 电流供应（主 IC）： | 32mA |
| 电压 - 电源，单路/双路(±)： | ±3.5 V ~ 6.5 V |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | OPA659 |
| 其它名称： | 296-30974 OPA659EVM-ND |
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APPLICATION INFORMATION
Wideband, Noninverting Operation
OPA659
R
OUT
0.1 F
m
10 F
m
0.1 F
m
10 F
m
50
Load
W
50
Source
W
R
T
R
G
V
IN
V
OUT
R
F
+6V
-
6V
OPA659
R
OUT
0.1 F
m
10 F
m
0.1 F
m
10 F
m
50
Load
W
50
Source
W
R
T
V
IN
V
OUT
+6V
-
6V
SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com
Voltage-feedback op amps can use a wide range of
resistor values to set the gain. To retain a controlled
The OPA659 is a very broadband, unity-gain stable,
frequency response for the noninverting voltage
voltage-feedback amplifier with a high impedance
amplifier of Figure 35, the parallel combination of RF
JFET-input stage. Its very high gain bandwidth
|| RG should always be less than 200. In the
product (GBP) of 350MHz can be used to either
noninverting configuration, the parallel combination of
deliver high signal bandwidths for low-gain buffers, or
RF || RG forms a pole with the parasitic input and
to deliver broadband, low-noise, transimpedance
board layout capacitance at the inverting input of the
bandwidth to photodiode-detector applications. The
OPA659. For best performance, this pole should be
OPA659 is designed to to provide very low distortion
at
a
frequency
greater
than
the
closed-loop
and accurate pulse response with low overshoot and
bandwidth for the OPA659. For this reason, a direct
ringing. To achieve the full performance of the
short from the output to the inverting input is
OPA659, careful attention to printed circuit board
recommended for the unity-gain follower application.
(PCB) layout and component selection are required,
Table 1 lists several recommended resistor values for
as discussed in the remaining sections of this data
noninverting gains with a 50
input/output match.
sheet.
Figure 34 shows the noninverting gain of +1 circuit;
Figure 35 shows the more general circuit used for
other noninverting gains. These circuits are used as
the basis for most of the noninverting gain Typical
Characteristics graphs. Most of the graphs were
characterized using signal sources with 50
driving
impedance,
and
with
measurement
equipment
presenting a 50
load impedance. In Figure 34, the
shunt resistor RT at VIN should be set to 50 to
match the source impedance of the test generator
and cable, while the series output resistor, ROUT, at
VOUT should also be set to 50 to provide matching
impedance for the measurement equipment load and
cable.
Generally,
data
sheet
voltage
swing
Figure 35. General Noninverting Test Circuit
specifications are measured at the output pin, VOUT,
Table 1. Resistor Values for Noninverting Gains
with 50
Input/Output Match
NONINVERTING
GAIN
RF
RG
RT
ROUT
+1
0
Open
49.9
+2
249
49.9
+5
249
61.9
49.9
+10
249
27.4
49.9
Figure 34. Noninverting Gain of +1 Test Circuit
12
Copyright 2008–2009, Texas Instruments Incorporated
Product Folder Link(s): OPA659
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OPA659IDBVR | 功能描述:高速运算放大器 650MHz unity gain stable JFET Inp amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDBVT | 功能描述:高速运算放大器 650MHz unity gain stable JFET Inp amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBR | 功能描述:高速运算放大器 650MHz unity gain stable JFET inp Amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBT | 功能描述:高速运算放大器 650MHz unity gain stable JFET inp Amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBT | 制造商:Texas Instruments 功能描述:Operational Amplifier (Op-Amp) IC 制造商:Texas Instruments 功能描述:IC, OP-AMP, 350MHZ, 2550V/ us, SON-8 |
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