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参数资料
| 型号： | S29AL032D70BAE002 |
| 厂商： | Spansion Inc. |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 32兆位的CMOS 3.0伏只闪存 |
| 文件页数： | 27/69页 |
| 文件大小： | 1970K |
| 代理商： | S29AL032D70BAE002 |
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June 13, 2005 S29AL032D_00_A3
S29AL032D
31
Ad vance
Info rmat i o n
Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations. Table 17 on page 38 defines the valid register command sequences. Writing
incorrect address and data values or writing them in the improper sequence resets the de-
vice to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate tim-
ing diagrams in the “AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is also ready to read array data after completing an Embed-
ded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode.
The system can read array data using the standard read timings, except that if it reads at an ad-
dress within erase-suspended sectors, the device outputs status data. After completing a
programming operation in the Erase Suspend mode, the system may once again read array data
with the same exception. See Erase Suspend/Erase Resume Commands on page 35 for more in-
formation on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5
goes high, or while in the autoselect mode. See the Reset Command on page 32 section, next.
See also Requirements for Reading Array Data on page 11 for more information. The Read
Operations on page 50 provides the read parameters, and Figure 14, on page 50 shows the timing
diagram.
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
9Ch
00C5h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
9Eh
000xh
Top/Bottom Boot Sector Flag
(0 = Model 00, 2 = Model 03, 3 = Model 04)
Table 15. Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Addresses
(Models 03, 04
Byte Mode
Only)
Data
Description
相关PDF资料 |
PDF描述 |
|---|---|
| S29AL032D90TFI042 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29AL032D90TFI043 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD016G0JDEI007 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD032J1JFAI122 | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI030 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI032 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R |
| S29AL032D70BFI000 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29AL032D70BFI030 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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