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参数资料
| 型号： | S29AL032D70BAE002 |
| 厂商： | Spansion Inc. |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 32兆位的CMOS 3.0伏只闪存 |
| 文件页数： | 39/69页 |
| 文件大小： | 1970K |
| 代理商： | S29AL032D70BAE002 |
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42
S29AL032D
S29AL032D_00_A3 June 13, 2005
Advan ce
In form ati o n
tion. Figure 22, on page 57 shows the toggle bit timing diagram. Figure 23, on page 58 shows
the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7, on page 43 for the following discussion. Whenever the system initially begins
reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after
the first read. After the second read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device has completed the program or erase
operation. The system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still tog-
gling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If
it is, the system should then determine again whether the toggle bit is toggling, since the toggle
bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the
device has successfully completed the program or erase operation. If it is still toggling, the device
did not complete the operation successfully, and the system must write the reset command to
return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and
DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through suc-
cessive read cycles, determining the status as described in the previous paragraph. Alternatively,
it may choose to perform other system tasks. In this case, the system must start at the beginning
of the algorithm when it returns to determine the status of the operation (top of Figure 7, on page
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PDF描述 |
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| S29AL032D90TFI042 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29AL032D90TFI043 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD016G0JDEI007 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI030 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI032 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R |
| S29AL032D70BFI000 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29AL032D70BFI030 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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