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| 型号： | S29AL032D70BAE002 |
| 厂商： | Spansion Inc. |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 32兆位的CMOS 3.0伏只闪存 |
| 文件页数： | 5/69页 |
| 文件大小： | 1970K |
| 代理商： | S29AL032D70BAE002 |
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June 13, 2005 S29AL032D_00_A3
S29AL032D
11
Ad vance
Info rmat i o n
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated
through the internal command register. The command register itself does not occupy any addres-
sable memory location. The register is composed of latches that store the commands, along with
the address and data information needed to execute the command. The contents of the register
serve as inputs to the internal state machine. The state machine outputs dictate the function of
the device. Table 1 lists the device bus operations, the inputs and control levels they require, and
the resulting output. The following subsections describe each of these operations in further detail.
Table 1. S29AL032D Device Bus Operations
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT
= Data Out
Notes:
1. When the ACC pin is at VHH, the device enters the accelerated program mode. See
2. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL).
3. The sector protect and sector unprotect functions may also be implemented via programming equipment.
4. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector
protection depends on whether they were last protected or unprotected. If WP#/ACC = VHH, all sectors are unprotected.
5. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm.
6. Models 03, 04 only
Word/Byte Configuration (Models 03, 04 Only)
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word
configuration. If the BYTE# pin is set at logic 1, the device is in word configuration, DQ15–DQ0
are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–
DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and
the DQ15 pin is used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is
the power control and selects the device. OE# is the output control and gates array data to the
output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs
array data in words or bytes.
Operation
CE#
OE# WE#
RESET#
WP#(Note 6)/
ACC
Addresses
DQ0–
DQ7
DQ8–DQ15 (Note 6)
BYTE#
= VIH
BYTE# = VIL
Read
LL
H
L/H
AIN
DOUT
DQ8–DQ14 =
High-Z, DQ15 =
A-1
Write (Note 1)
LH
L
H
AIN
Accelerated Program
LH
L
H
VHH
AIN
Standby
VCC ±
0.3 V
XX
VCC ±
0.3 V
H
X
High-Z
Output Disable
L
H
L/H
X
High-Z
Reset
X
L
L/H
X
High-Z
Sector Protect (Note 3)
LH
L
VID
L/H
SA, A6 = L,
A1 = H, A0 = L
XX
Sector Unprotect
LH
L
VID
SA, A6 = H,
A1 = H, A0 = L
XX
Temporary Sector
Unprotect
XX
X
VID
AIN
High-Z
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI030 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI032 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R |
| S29AL032D70BFI000 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29AL032D70BFI030 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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