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参数资料
| 型号： | S29AL032D70BAE002 |
| 厂商： | Spansion Inc. |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 32兆位的CMOS 3.0伏只闪存 |
| 文件页数： | 34/69页 |
| 文件大小： | 1970K |
| 代理商： | S29AL032D70BAE002 |
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S29AL032D
S29AL032D_00_A3 June 13, 2005
Advan ce
In form ati o n
General Description
The S29AL032D is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ0-DQ15;
byte mode data appears on DQ0-DQ7. The device is designed to be programmed in-system with
the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.
The device is available with access times as fast as 70 ns. The devices are offered in 40-pin TSOP,
48-pin TSOP and 48-ball FBGA packages. Standard control pins- chip enable (CE#), write enable
(WE#), and output enable (OE#)-control normal read and write operations, and avoid bus con-
tention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. In-
ternally generated and regulated voltages are provided for the pro-gram and erase operations.
S29AL032D Features
The Secured Silicon Sector is an extra sector capable of being permanently locked by Spansion
or customers. The Secured Silicon Indicator Bit (DQ7) is permanently set to a 1 if the part is
factory locked, and set to a 0 if customer lockable. This way, customer lockable parts can never
be used to replace a factory locked part. Note that the S29AL032D has a Secured Silicon
Sector size of 128 words (256 bytes).
Factory locked parts provide several options. The Secured Silicon Sector may store a secure, ran-
dom 16 byte ESN (Electronic Serial Number), customer code (programmed through the Spansion
programming service), or both.
The S29AL032D is entirely command set compatible with the JEDEC single-power-supply
Flash standard. Commands are written to the command register using standard microprocessor
write timings. Register contents serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally latch addresses and data needed for
the programming and erase operations. Reading data out of the device is similar to reading from
other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Em-
bedded Program algorithm—an internal algorithm that automatically times the program pulse
widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming
times by requiring only two write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not al-
ready programmed) before executing the erase operation. During erase, the device automatically
times the erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the
RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a pro-
gram or erase cycle has been completed, the device is ready to read array data or accept another
command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the
factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write
operations during power transitions. The hardware sector protection feature disables both
program and erase operations in any combination of the sectors of memory. This can be achieved
in-system or via programming equipment.
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PDF描述 |
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| S29AL032D90TFI042 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29AL032D90TFI043 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD016G0JDEI007 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD032J1JFAI122 | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI030 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI032 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R |
| S29AL032D70BFI000 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29AL032D70BFI030 | 功能描述:闪存 32MB 闪存 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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