参数资料
型号: S29CD016G0MFAN002
厂商: SPANSION LLC
元件分类: PROM
英文描述: 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80
封装: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件页数: 35/81页
文件大小: 1276K
代理商: S29CD016G0MFAN002
38
S29CD-G Flash Family
S29CD-G_00_B1 March 3, 2009
Data
Sheet
(Pre limin ar y)
Note
* On 16 Mb device, data at address 31h is 1Dh.
Table 14.3 Device Geometry Definition
Addresses
Data
Description
27h
0016h
Device Size = 2
N byte
28h
29h
0005h
0000h
Flash Device Interface description (for complete description, please refer to CFI publication 100)
0000 = x8-only asynchronous interface
0001 = x16-only asynchronous interface
0002 = supports x8 and x16 via BYTE# with asynchronous interface
0003 = x 32-only asynchronous interface
0005 = supports x16 and x32 via WORD# with asynchronous interface
2Ah
2Bh
0000h
Max. number of byte in multi-byte program = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
003Dh*0
000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
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