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参数资料
| 型号： | S29CD016G0MFAN002 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80 |
| 封装： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件页数： | 49/81页 |
| 文件大小： | 1276K |
| 代理商： | S29CD016G0MFAN002 |
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March 3, 2009 S29CD-G_00_B1
S29CD-G Flash Family
51
Da ta
Shee t
(Prelim i nar y )
15.30 Non-volatile Protection Bit Program And Erase Flow
The device uses a standard command sequence for programming or erasing the Secured Silicon Sector
Protection, Password Locking, Persistent Sector Protection Mode Locking, or Persistent Protection Bits.
Unlike devices that have the Single High Voltage Sector Unprotect/Protect feature, the device has the
standard two-cycle unlock followed by 60h, which places the device into non-volatile bit program or erase
mode. Once the mode is entered, the specific non-volatile bit status is read on DQ0. Figure 15.1 on page 43
shows a typical flow for programming the non-volatile bit and Figure 15.2 on page 46 shows a typical flow for
erasing the non-volatile bits. The Secured Silicon Sector Protection, Password Locking, Persistent Sector
Protection Mode Locking bits are not erasable after they are programmed. However, the PPBs are both
erasable and programmable (depending upon device security).
Unlike Single High Voltage Sector Protect/Unprotect, the A6 pin no longer functions as the program/erase
selector nor the program/erase margin enable. Instead, this function is accomplished by issuing the specific
command for either program (68h) or erase (60h).
In asynchronous mode, the DQ6 toggle bit indicates whether the program or erase sequence is active. (In
synchronous mode, ADV# indicates the status.) If the DQ6 toggle bit toggles with either OE# or CE#, the non-
volatile bit program or erase operation is in progress. When DQ6 stops toggling, the value of the non-volatile
bit is available on DQ0.
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| S29CD016G0MFAN010 | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD032G0JFFN002 | 1M X 32 FLASH 2.7V PROM, 67 ns, PBGA80 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29CD016G0MFAN003 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN010 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN011 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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