参数资料
型号: S29CD016G0MFAN002
厂商: SPANSION LLC
元件分类: PROM
英文描述: 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80
封装: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件页数: 72/81页
文件大小: 1276K
代理商: S29CD016G0MFAN002
72
S29CD-G Flash Family
S29CD-G_00_B1 March 3, 2009
Data
Sheet
(Pre limin ar y)
24.6
Alternate CE# Controlled Erase/Program Operations
Notes
1. Not 100% tested.
2. See Command Definitions on page 40 for more information.
Figure 24.15 Alternate CE# Controlled Write Operation Timings
Notes
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
Parameter
Description
All Speed
Options
Unit
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
65
ns
tAVEL
tAS
Address Setup Time
Min
0
tELAX
tAH
Address Hold Time
Min
45
tDVEH
tDS
Data Setup Time
Min
35
tEHDX
tDH
Data Hold Time
Min
2
tOES
Output Enable Setup Time
Min
0
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
tWLEL
tWS
WE# Setup Time
Min
tEHWH
tWH
WE# Hold Time
Min
tWP
WE# Width
Min
32
tELEH
tCP
CE# Pulse Width
Min
16
tEHEL
tCPH
CE# Pulse Width High
Min
30
tWHWsH1
tWHWH1
Programming Operation (Note 2)
Double-Word
Typ
18
s
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec.
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
tWPH
tWP
Addresses
相关PDF资料
PDF描述
S29CD016G0MFAN003 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN010 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD032G0JFFN002 1M X 32 FLASH 2.7V PROM, 67 ns, PBGA80
S29CD032G0RFFN003 1M X 32 FLASH 2.7V PROM, 48 ns, PBGA80
S29CD032G0RQFI012 1M X 32 FLASH 2.7V PROM, 48 ns, PQFP80
相关代理商/技术参数
参数描述
S29CD016G0MFAN003 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN010 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN011 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN012 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN013 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory