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| 型号： | S29CD016G0MFAN002 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80 |
| 封装： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件页数： | 42/81页 |
| 文件大小： | 1276K |
| 代理商： | S29CD016G0MFAN002 |
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March 3, 2009 S29CD-G_00_B1
S29CD-G Flash Family
45
Da ta
Shee t
(Prelim i nar y )
Sector erase does not require the user to program the device prior to erase. The device automatically
preprograms all memory locations, within sectors to be erased, prior to electrical erase. When erasing a
sector or sectors, the remaining unselected sectors or the write protected sectors are unaffected. The system
is not required to provide any controls or timings during sector erase operations. The Erase Suspend and
Erase Resume commands may be written as often as required during a sector erase operation.
Automatic sector erase operations begin on the rising edge of the WE# or CE# pulse of the last sector erase
command issued, and once the 80 s time-out window expires. The status of the sector erase operation is
determined three ways:
Data# polling of the DQ7 pin
Checking the status of the toggle bit DQ6
Checking the status of the RY/BY# pin
Further status of device activity during the sector erase operation is determined using toggle bit DQ2 (See
When the Embedded Erase algorithm is complete, the device returns to reading array data, and addresses
are no longer latched. Note that an address change is required to begin read valid array data.
Figure 15.2 on page 46 illustrates the Embedded Erase Algorithm, using a typical command sequence and
bus operation. See Erase/Program Operations on page 68 for parameters, and to Figure 24.8 on page 69
and Figure 24.9 on page 69 for timing diagrams.
15.10 Sector Erase and Program Suspend Command
The Sector Erase and Program Suspend command allows the user to interrupt a Sector Erase or Program
operation and perform data read or programs in a sector that is not being erased or to the sector where a
programming operation was initiated. This command is applicable only during the Sector Erase and
Programming operation, which includes the time-out period for Sector Erase.
15.11 Sector Erase and Program Suspend Operation Mechanics
The Sector Erase and Program Suspend command is ignored if written during the execution of the Chip
Erase operation or Embedded Program Algorithm (but resets the chip if written improperly during the
command sequences). Writing the Sector Erase and Program command during the Sector Erase time-out
results in immediate termination of the time-out period and suspension of the erase operation. Once in Erase
Suspend, the device is available for reading (note that in the
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| S29CD032G0JFFN002 | 1M X 32 FLASH 2.7V PROM, 67 ns, PBGA80 |
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相关代理商/技术参数 |
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|---|---|
| S29CD016G0MFAN003 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN010 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN011 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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