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参数资料
| 型号： | S29GL032N90BFI32 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封装： | 8.15 X 6.15 MM, LEAD FREE, FBGA-48 |
| 文件页数： | 10/81页 |
| 文件大小： | 3095K |
| 代理商： | S29GL032N90BFI32 |
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18
S29GL-N MirrorBit Flash Family
S29GL-N_01_12 October 29, 2008
Da ta
Sh e e t
8.2.1
Page Mode Read
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page size of
the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)–A3.
Address bits A2–A0 in word mode (A2–A-1 in byte mode) determine the specific word within a page. This is
an asynchronous operation; the microprocessor supplies the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the
locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is
deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode
accesses are obtained by keeping the read-page addresses constant and changing the intra-read page
addresses.
8.3
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The Word
Program Command Sequence on page 42 contains details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 8.2 – 8.8 indicate the
address space that each sector occupies.
Refer to the DC Characteristics table for the active current specification for the write mode. The AC
Characteristics section contains timing specification tables and timing diagrams for write operations.
8.3.1
Write Buffer
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming time than the standard programming algorithms.
8.3.2
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of two functions
provided by the WP#/ACC or ACC pin, depending on model number. This function is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the Unlock Bypass mode, temporarily
unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for
program operations. The system would use a two-cycle program command sequence as required by the
Unlock Bypass mode. Removing VHH from the WP#/ACC or ACC pin, depending on model number, returns
the device to normal operation. Note that the WP#/ACC or ACC pin must not be at VHH for operations other
than accelerated programming, or device damage may result. WP# contains an internal pull-up; when
unconnected, WP# is at VIH.
8.3.3
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system
can then read autoselect codes from the internal register (which is separate from the memory array) on
DQ7-DQ0. Standard read cycle timings (tACC) apply in this mode. Refer to Autoselect Mode on page 29 and
Autoselect Command Sequence on page 42 for more information.
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相关代理商/技术参数 |
参数描述 |
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| S29GL032N90DFI020 | 功能描述:IC FLASH 32MBIT 90NS 64BGA 制造商:cypress semiconductor corp 系列:GL-N 包装:托盘 零件状态:在售 存储器类型:非易失 存储器格式:闪存 技术:FLASH - NOR 存储容量:32Mb （4M x 8，2M x 16） 写周期时间 - 字，页:90ns 访问时间:90ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:64-LBGA 供应商器件封装:64 球加强型 BGA（9x9） 标准包装:260 |
| S29GL032N90DFI023 | 功能描述:IC FLASH 32MBIT 90NS 64BGA 制造商:cypress semiconductor corp 系列:GL-N 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:闪存 技术:FLASH - NOR 存储容量:32Mb （4M x 8，2M x 16） 写周期时间 - 字，页:90ns 访问时间:90ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:64-LBGA 供应商器件封装:64 球加强型 BGA（9x9） 标准包装:1 |
| S29GL032N90FAI030 | 制造商:Spansion 功能描述:IC, FLASH - Trays |
| S29GL032N90FAI040 | 功能描述:闪存 32Mb 3V 90ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29GL032N90FFI010 | 功能描述:闪存 32Mb 3V 90ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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