- 您现在的位置：买卖IC网 > Datasheet目录509 > SI3529DV-T1-GE3 (Vishay Siliconix)MOSFET N/P-CH 40V 6-TSOP Datasheet资料下载
参数资料
| 型号： | SI3529DV-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/16页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 40V 6-TSOP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A，1.95A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 205pF @ 20V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.065"，1.65mm 宽） |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
Si3529DV
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A) a Q g (Typ.)
? Halogen-free According to IEC 61249-2-21
Definition
N-Channel
P-Channel
40
- 40
0.125 at V GS = 10 V
0.165 at V GS = 4.5 V
0.215 at V GS = - 10 V
0.335 at V GS = - 4.5 V
2.250
1.95
- 1.76
- 1.4
2.2
2.3
? TrenchFET ? Power MOSFETs
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Stepper Motor
TSOP-6
Top V iew
? Motor Drives
D 1
S 2
G 1
1
6
D 1
3 mm
S 2
2
5
S 1
G 2
G 1
G 2
3
2.85 mm
4
D 2
S 1
D 2
Ordering Information: Si3529DV-T1-E3 (Lead (Pb)-free)
Si3529DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
40
± 20
- 40
V
T C = 25 °C
2.5
- 1.95
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
2.0
2.25 b, c
1.8 b, c
- 1.56
- 1.76 b, c
- 1.4 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
10
-6
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
1.26
1.05 b, c
10
- 1.26
- 1.05 b, c
-6
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
5
1.25
5
1.25
mJ
T C = 25 °C
1.4
1.4
1.15
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
0.9
b, c
0.9
1.15 c
W
T A = 70 °C
0.7 b, c
0.78 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 sec
Steady State
R thJA
R thJF
93
75
110
90
93
75
110
90
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 150 °C/W (N-Channel) and 150 °C/W (P-Channel).
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI3812DV-T1-GE3 | MOSFET N-CH 20V 2A 6-TSOP |
| SI3853DV-T1-GE3 | MOSFET P-CH 20V 1.6A 6-TSOP |
| SI3867DV-T1-GE3 | MOSFET P-CH 20V 3.9A 6-TSOP |
| SI3905DV-T1-GE3 | MOSFET P-CH D-S 8V 6-TSOP |
| SI3909DV-T1-GE3 | MOSFET 2P-CH 20V 6TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3529DV-T1-GE3 | 制造商:Vishay Siliconix 功能描述:DUAL N/P CHANNEL MOSFET 40V TSOP |
| Si3540 | 功能描述:电机驱动器 PKG 3.5A 40VDC IND RoHS:否 制造商:Applied Motion 电机驱动类型:2035 Step 电源电压:12 V to 35 V 功率额定值:70 W 每转步距分辨率:200 to 400 框架大小 (NEMA): |
| SI-3552 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3552DV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3552DV_05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。