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参数资料
| 型号： | SI3529DV-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 40V 6-TSOP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A，1.95A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 205pF @ 20V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.065"，1.65mm 宽） |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
Si3529DV
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Dynamic a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t d(on)
t r
t d(off)
N-Channel
V DD = 20 V, R L = 4 Ω
I D ? 1 A, V GEN = 10 V, R g = 1 Ω
P-Channel
V DD = - 20 V, R L = 4 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.5
5
12.5
12.5
8
10
4
7.5
20
20
12
15
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t f
t d(on)
t r
t d(off)
t f
I D ? - 1 A, V GEN = - 10 V, R g = 1 Ω
N-Channel
V DD = 20 V, R L = 4 Ω
I D ? 1 A, V GEN = 4.5 V, R g = 1 Ω
P-Channel
V DD = - 20 V, R L = 4 Ω
I D ? - 1 A, V GEN = - 4.5 V, R g = 16 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
6.0
7.5
13
23
65
38
5
20
8
16
9
12
20
35
100
60
7.5
30
12
25
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
Continuous Source-Drain Diode Current
a
I S
I SM
T C = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
1.05
- 1.05
10
-6
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1.0 A
N-Channel
I F = 2 A, dI/dt = 100 A/μs, T J = 25 °C
P-Channel
I F = - 2 A, dI/dt = - 100 A/μs, T J = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
- 0.8
20
26
20
22
17
12
3
14
1.2
- 1.2
40
40
30
35
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73455
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3529DV-T1-GE3 | 制造商:Vishay Siliconix 功能描述:DUAL N/P CHANNEL MOSFET 40V TSOP |
| Si3540 | 功能描述:电机驱动器 PKG 3.5A 40VDC IND RoHS:否 制造商:Applied Motion 电机驱动类型:2035 Step 电源电压:12 V to 35 V 功率额定值:70 W 每转步距分辨率:200 to 400 框架大小 (NEMA): |
| SI-3552 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3552DV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3552DV_05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
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