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参数资料
型号： ST10F269DIETR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 32 MHz, MICROCONTROLLER, UUC
封装： DIE
文件页数： 71/161页
文件大小： 1595K
代理商： ST10F269DIETR
ST10F269-T3
17/160
5 - INTERNAL FLASH MEMORY
5.1 - Overview
– 256K Byte on-chip Flash memory
– Two possibilities of Flash mapping into the CPU
address space
– Flash memory can be used for code and data
storage
– 32-bit, zero waitstate read access (62.5ns cycle
time at fCPU = 32MHz)
– Erase-Program Controller (EPC) similar to
M29F400B STM’s stand-alone Flash memory
Word-by-Word Programmable (16
s typical)
Data polling and Toggle Protocol for EPC
Status
Ready/Busy signal connected on XP2INT
interrupt line
Internal Power-On detection circuit
– Memory Erase in blocks
One 16K Byte, two 8K Byte, one 32K Byte,
three 64K Byte blocks
Each
block
can
be
erased
separately
(1.5 second typical)
Chip erase (8.5 second typical)
Each block can be separately protected
against programming and erasing
Each protected block can be temporary unpro-
tected
When enabled, the read protection prevents
access to data in Flash memory using a pro-
gram running out of the Flash memory space.
Access to data of internal Flash can only be per-
formed with an inner protected program
– Erase Suspend and Resume Modes
Read and Program another Block during erase
suspend
– Single Voltage operation, no need of dedicated
supply pin
– Low Power Consumption:
45mA max. Read current
60mA max. Program or Erase current
Automatic Stand-by-mode (50
A maximum)
– 100,000
Erase-Program
Cycles
per
block,
20 years of data retention time
– Operating temperature: -40 to +125oC
5.2 - Operational Overview
Read Mode
In standard mode (the normal operating mode)
the Flash appears like an on-chip ROM with the
same timing and functionality. The Flash module
offers a fast access time, allowing zero waitstate
access with CPU frequency up to 32MHz.
Instruction fetches and data operand reads are
performed with all addressing modes of the
ST10F269-T3 instruction set.
In order to optimize the programming time of the
internal Flash, blocks of 8K Bytes, 16K Bytes,
32K Bytes, 64K Bytes can be used. But the size of
the blocks does not apply to the whole memory
space, see details in Table 2.
Table 2 : 256K Byte Flash Memory Block Organization
Block
Addresses (Segment 0)
Addresses (Segment 1)
Size (byte)
0
1
2
3
4
5
6
00’0000h to 00’3FFFh
00’4000h to 00’5FFFh
00’6000h to 00’7FFFh
01’8000h to 01’FFFFh
02’0000h to 02’FFFFh
03’0000h to 03’FFFFh
04’0000h to 04’FFFFh
01’0000h to 01’3FFFh
01’4000h to 01’5FFFh
01’6000h to 01’7FFFh
01’8000h to 01’FFFFh
02’0000h to 02’FFFFh
03’0000h to 03’FFFFh
04’0000h to 04’FFFFh
16K
8K
32K
64K
相关PDF资料
PDF描述
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相关代理商/技术参数
参数描述
ST10F269-DP 功能描述:16位微控制器 - MCU 16-bit MCU MAC 256 Kbyte Flash RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269-DPB 功能描述:16位微控制器 - MCU 16-bit MCU MAC 256 Kbyte Flash RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269-DPR 功能描述:16位微控制器 - MCU 16Bit MCU 256K BYTE FLASH,12K BYTE RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269DT3 功能描述:16位微控制器 - MCU 16Bit MCU 256K BYTE FLASH,12K BYTE RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269DTR3 功能描述:16位微控制器 - MCU 16-bit MCU MAC unit 256 Kbyte Flash RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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