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参数资料
型号： ST10F269DIETR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 32 MHz, MICROCONTROLLER, UUC
封装： DIE
文件页数： 81/161页
文件大小： 1595K
代理商： ST10F269DIETR
ST10F269-T3
26/160
5.5.2 - Basic Flash Access Control
When accessing the Flash all command write addresses have to be located within the active Flash
memory space. The active Flash memory space is that logical address range which is covered by the
Flash after mapping. When using data page pointer (DPP) for addressing the Flash, make sure that
address bit A15 and A14 of the command addresses are reflected in both LSBs of the selected data page
pointer (A15 - DPPx.1 and A14 - DPPx.0).
In case of the command write addresses, address bit A14, A15 and above are don’t care. Thus, command
writes can be performed by only using one DPP register. This allow to have a more simple and compact
application software.
Another - advantageous - possibility is to use the extended segment instruction for addressing.
Note: The direct addressing mode is not allowed for write access to the Flash address/command
register. Be aware that the C compiler may use this kind of addressing. For write accesses to
Flash module always the indirect addressing mode has to be selected.
The following basic instruction sequences show examples for different addressing possibilities.
Principle example of address generation for Flash commands and registers:
When using data page pointer (DPP0 is this example)
MOV
DPP0,#08h
;adjust data page pointers according to the
;addresses: DPP0 is used in this example, thus
;ADDRESS must have A14 and A15 bit set to ‘0’.
MOV
Rwm,#ADDRESS
;ADDRESS could be a dedicated command sequence
;address 2AA8h, 1554h ... ) or the Flash write
;address
MOV
Rwn,#DATA
;DATA could be a dedicated command sequence data
;(xxA0h,xx80h ... ) or data to be programmed
MOV
[Rwm],Rwn
;indirect addressing
When using the extended segment instruction:
MOV
Rwm,#ADDRESS
;ADDRESS could be a dedicated command sequence
;address (2AA8h, 1554h ... ) or the Flash write
;address
MOV
Rwo,#DATA
;DATA could be a dedicated command sequence data
;(xxA0h,xx80h ... ) or data to be programmed
MOV
Rwn,#SEGMENT
;the value of SEGMENT represents the segment
;number and could be 0, 1, 2, 3 or 4 (depending
;on sector mapping) for 256KByte Flash.
EXTS
Rwn,#LENGTH
;the value of Rwn determines the 8-bit segment
;valid for the corresponding data access for any
;long or indirect address in the following(s)
;instruction(s). LENGTH defines the number of
;the effected instruction(s) and has to be a value
;between 1...4
MOV
[Rwm],Rwo
;indirect addressing with segment number from
;EXTS
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相关代理商/技术参数
参数描述
ST10F269-DP 功能描述:16位微控制器 - MCU 16-bit MCU MAC 256 Kbyte Flash RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269-DPB 功能描述:16位微控制器 - MCU 16-bit MCU MAC 256 Kbyte Flash RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269-DPR 功能描述:16位微控制器 - MCU 16Bit MCU 256K BYTE FLASH,12K BYTE RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269DT3 功能描述:16位微控制器 - MCU 16Bit MCU 256K BYTE FLASH,12K BYTE RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269DTR3 功能描述:16位微控制器 - MCU 16-bit MCU MAC unit 256 Kbyte Flash RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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