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| 型号： | ST7PLITEUS5U3TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, DSO8 |
| 封装： | LEAD FREE, DFN-8 |
| 文件页数： | 14/108页 |
| 文件大小： | 1957K |
| 代理商： | ST7PLITEUS5U3TR |
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ST7LITEUSx
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FLASH PROGRAM MEMORY (Cont’d)
5. A serial resistor must be connected to ICC con-
nector pin 6 in order to prevent contention on PA3/
RESET pin. Contention may occur if a tool forces a
state on RESET pin while PA3 pin forces the op-
posite state in output mode. The resistor value is
defined to limit the current below 2mA at 5V. If PA3
is used as output push-pull, then the application
must be switched off to allow the tool to take con-
trol of the RESET pin (PA3). To allow the program-
ming tool to drive the RESET pin below VIL, spe-
cial care must also be taken when a pull-up is
placed on PA3 for application reasons.
Caution: During normal operation, ICCCLK pin
must be pulled- up, internally or externally (exter-
nal pull-up of 10k mandatory in noisy environ-
ment). This is to avoid entering ICC mode unex-
pectedly during a reset. In the application, even if
the pin is configured as output, any reset will put it
back in input pull-up.
4.5 Memory Protection
There are two different types of memory protec-
tion: read-out protection and Write/Erase Protec-
tion which can be applied individually.
4.5.1 Read-out Protection
Readout protection, when selected provides a pro-
tection against program memory content extrac-
tion and against write access to Flash memory.
Even if no protection can be considered as totally
unbreakable, the feature provides a very high level
of protection for a general purpose microcontroller.
Program memory is protected.
In flash devices, this protection is removed by re-
programming the option. In this case, program
memory is automatically erased, and the device
can be reprogrammed.
Read-out protection selection depends on the de-
vice type:
– In Flash devices it is enabled and removed
through the FMP_R bit in the option byte.
– In ROM devices it is enabled by mask option
specified in the Option List.
4.5.2 Flash Write/Erase Protection
Write/erase protection, when set, makes it impos-
sible to both overwrite and erase program memo-
ry. Its purpose is to provide advanced security to
applications and prevent any change being made
to the memory content.
Warning: Once set, Write/erase protection can
never be removed. A write-protected flash device
is no longer reprogrammable.
Write/erase protection is enabled through the
FMP_W bit in the option byte.
4.6 Related Documentation
For details on Flash programming and ICC proto-
col, refer to the ST7 Flash Programming Refer-
ence Manual and to the ST7 ICC Protocol Refer-
ence Manual
.
4.7 Register Description
FLASH CONTROL/STATUS REGISTER (FCSR)
Read/Write
Reset Value: 000 0000 (00h)
1st RASS Key: 0101 0110 (56h)
2nd RASS Key: 1010 1110 (AEh)
Note: This register is reserved for programming
using ICP, IAP or other programming methods. It
controls the XFlash programming and erasing op-
erations.
When an EPB or another programming tool is
used (in socket or ICP mode), the RASS keys are
sent automatically.
Table 3. FLASH Register Map and Reset Values
70
00
000
OPT
LAT
PGM
Address
(Hex.)
Register
Label
76543
210
002Fh
FCSR
Reset Value
00000
OPT
0
LAT
0
PGM
0
1
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