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| 型号： | SUM33N20-60P-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 33A D2PAK |
| 产品目录绘图： | SUB, SUM Series |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 33A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 59 毫欧 @ 20A，15V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 113nC @ 15V |
| 输入电容 (Ciss) @ Vds： | 2735pF @ 25V |
| 功率 - 最大： | 3.12W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 标准包装 |
| 其它名称： | SUM33N20-60P-E3DKR |
SUM33N20-60P
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V DS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V DS = 0 V, V GS = ± 25 V
200
2.5
4.5
± 100
± 300
V
nA
V DS = 200 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 200 V, V GS = 0 V, T J = 100 °C
25
μA
V DS = 200 V, V GS = 0 V, T J = 150 °C
250
On-State Drain Current a
I D(on)
V DS ≥ 10 V, V GS = 10 V
V GS = 10 V, I D = 20 A
40
0.049
0.060
A
Drain-Source On-State Resistance a
r DS(on)
V GS = 15 V, I D = 20 A
V GS = 10 V, I D = 20 A, T J = 100 °C
0.0485
0.059
0.110
Ω
V GS = 10 V, I D = 20 A, T J = 150 °C
0.144
Forward
Transconductance a
g fs
V DS = 15 V, I D = 20 A
25
S
Dynamic b
Input Capacitance
C iss
2735
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, V DS = 25 V, f = 1 MHz
271
117
pF
Total Gate Charge c
Gate-Source Charge c
Q g
Q gs
V DS = 100 V, V GS = 15 V, I D = 50 A
V DS = 100 V, V GS = 10 V, I D = 50 A
75
53
14
113
80
nC
Gate-Drain Charge c
Q gd
17.5
Gate Resistance
Turn-On Delay Time c
R g
t d(on)
f = 1 MHz
1.2
16
1.8
25
Ω
Rise Time c
Turn-Off Delay Time
c
t r
t d(off)
V DD = 100 V, R L = 2 Ω
I D ? 50 A, V GEN = 10 V, R g = 1 Ω
170
26
260
40
ns
Fall Time c
t f
9
18
Source-Drain Diode Ratings and Characteristics (T C = 25
°C) b
Continuous Current
Pulsed Current
I S
I SM
33
80
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
I RM(REC)
Q rr
t a
t b
I F = 20 A, V GS = 0 V
I F = 40 A, di/dt = 100 A/μs
0.86
114
8
0.46
82
32
1.5
170
12
0.69
V
ns
A
μC
nS
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
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