参数资料
型号: SUM33N20-60P-E3
厂商: Vishay Siliconix
文件页数: 6/6页
文件大小: 0K
描述: MOSFET N-CH 200V 33A D2PAK
产品目录绘图: SUB, SUM Series
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 33A
开态Rds(最大)@ Id, Vgs @ 25° C: 59 毫欧 @ 20A,15V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 113nC @ 15V
输入电容 (Ciss) @ Vds: 2735pF @ 25V
功率 - 最大: 3.12W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263(D2Pak)
包装: 标准包装
其它名称: SUM33N20-60P-E3DKR

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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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