参数资料
型号: V58C2128804SBT5B
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 16M X 8 DDR DRAM, 0.65 ns, PDSO66
封装: 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66
文件页数: 10/62页
文件大小: 977K
代理商: V58C2128804SBT5B
18
V58C2128(804/404/164)SB Rev. 1.1 March 2004
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB
Burst Stop Command
The Burst Stop command is valid only during burst read cycles and is initiated by having RAS and CAS
high with CS and WE low at the rising edge of the clock. When the Burst Stop command is issued during a
burst Read cycle, both the output data (DQ) and data strobe (DQS) go to a high impedance state after a delay
(L
BST) equal to the CAS latency programmed into the device. If the Burst Stop command is issued during a
burst Write cycle, the command will be treated as a NOP command.
Read Terminated by Burst Stop Command Timing
(CAS Latency = 2, 2.5; Burst Length = 2)
T0
T1
T2
T3
T4
T5
T6
BST
NOP
Read
D0
D1
CK, CK
Command
DQS
DQ
D0
D1
DQS
DQ
CAS Latency = 2
CAS Latency = 2.5
LBST
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