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| 型号： | V58C2128804SBT5B |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 8 DDR DRAM, 0.65 ns, PDSO66 |
| 封装： | 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 |
| 文件页数： | 25/62页 |
| 文件大小： | 977K |
| 代理商： | V58C2128804SBT5B |
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31
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB
V58C2128(804/404/164)SB Rev. 1.1 March 2004
TRUTH TABLE 4 – Current State Bank n - Command to Bank m
(Notes: 1-6; notes appear below and on next page)
NOTE:
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after
tXSR has been met
(if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the
commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data
bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
CURRENT STATE
/CS
/RAS /CAS
/WE
COMMAND/ACTION
NOTES
Any
H
X
DESELECT (NOP/continue previous operation)
L
H
NO OPERATION (NOP/continue previous operation)
Idle
X
Any Command Otherwise Allowed to Bank m
Row Activating,
Active, or Precharging
L
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
7
L
H
L
WRITE (select column and start WRITE burst)
7
L
H
L
PRECHARGE
Read
(Auto-Precharge
Disabled)
L
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
7
L
H
L
PRECHARGE
Write
(Auto- Precharge
Disabled)
L
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
7, 8
L
H
L
WRITE (select column and start new WRITE burst)
7
L
H
L
PRECHARGE
Read
(With Auto-Precharge)
L
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
3a, 7
L
H
L
WRITE (select column and start WRITE burst)
3a, 7, 9
L
H
L
PRECHARGE
Write
(With Auto-Precharge)
L
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
3a, 7
L
H
L
WRITE (select column and start new WRITE burst)
3a, 7
L
H
L
PRECHARGE
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相关代理商/技术参数 |
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| V58C2256 | 制造商:MOSEL 制造商全称:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM |
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| V58C2256324SAB30 | 制造商:Marvell 功能描述:Marvell V58C2256324SAB30 |
| V58C2256324SAB33 | 制造商:Marvell 功能描述:Marvell V58C2256324SAB33 |
| V58C2256324SAB36 | 制造商:Marvell 功能描述:Marvell V58C2256324SAB36 |
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