参数资料
型号: V58C2128804SBT5B
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 16M X 8 DDR DRAM, 0.65 ns, PDSO66
封装: 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66
文件页数: 60/62页
文件大小: 977K
代理商: V58C2128804SBT5B
7
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB
V58C2128(804/404/164)SB Rev. 1.1 March 2004
Block Diagram
Row decoder
Memory array
Bank 0
4096 x 256
x32 bit
C
o
lu
mn
dec
oder
S
ens
e
ampl
if
ie
r&
I(
O
)bus
Row decoder
Memory array
Bank 1
C
o
lu
mn
d
e
c
o
der
S
e
ns
e
ampl
if
ie
r&
I(
O
)
bus
Row decoder
Memory array
Bank 2
C
o
lu
m
n
de
c
o
de
r
S
ens
e
ampl
if
ie
r&
I
(O
)bus
Row decoder
Memory array
Bank 3
Co
lu
m
n
d
e
c
o
d
e
r
S
ens
e
ampl
if
ie
r&
I
(O
)bus
Input buffer
Output buffer
DQ0-DQ15
Column address
counter
Column address
buffer
Row address
buffer
Refresh Counter
A0 - A11, BA0, BA1
A0 - A8, AP, BA0, BA1
Control logic & timing generator
CK
E
CS
RA
S
CA
S
WE
DM
Row Addresses
Column Addresses
DLL
Strobe
Gen.
Data Strobe
CK, CK
CK
DQS
4096 x 256
x 32 bit
4096 x 256
x 32 bit
4096 x 256
x 32 bit
8M x 16
Capacitance*
TA = 0 to 70°C, VCC = 2.5V ± 0.2V, VCC = 2.6V ± 0.1V
for DDR400, f = 1 Mhz
*Note: Capacitance is sampled and not 100% tested.
Absolute Maximum Ratings*
Operating temperature range ..................0 to 70 °C
Storage temperature range ................-55 to 150 °C
VDDSupply Voltage Relative to VSS.....-1V to +3.6V
VDDQ Supply Voltage Relative to VSS
......................................................-1V to +3.6V
VREF and Inputs Voltage Relative to VSS
......................................................-1V to +3.6V
I/O Pins Voltage Relative to VSS
.......................................... -0.5V to VDDQ+0.5V
Power dissipation .......................................... 1.6 W
Data out current (short circuit) ...................... 50 mA
*Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage of the device.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Input Capacitance
Symbol
Min Max Unit
BA0, BA1, CKE, CS, RAS, (CAS,
A0-A11, WE)
CINI
23.0
pF
Input Capacitance (CK, CK)CIN2
23.0
pF
Data & DQS I/O Capacitance
COUT
45
pF
Input Capacitance (DM)
CIN3
45.0
pF
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