参数资料
型号: V58C2128804SBT5B
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 16M X 8 DDR DRAM, 0.65 ns, PDSO66
封装: 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66
文件页数: 36/62页
文件大小: 977K
代理商: V58C2128804SBT5B
41
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB
V58C2128(804/404/164)SB Rev. 1.1 March 2004
20. This is not a device limit. The device will operate with a negative value, but system performance could be
degraded due to bus turnaround.
21. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS
going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous
WRITE was in progress, DQS could be HIGH during this time, depending on tDQSS.
22. MIN (tRC or tRFC) for IDD measurements is the smallest multiple of tCK that meets the minimum absolute value
for the respective parameter. tRAS (MAX) for IDD measurements is the largest multiple of tCK that
meets the maximum absolute value for tRAS.
NOTES: (continued)
23. The refresh period 64ms. This equates to an average refresh rate of 7.8s.
24. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum amount for any
given device.
25. The valid data window is derived by achieving other specifications - tHP (tCK/2), tDQSQ, and tQH
(tQH = tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data
valid window can be derived. The clock is allowed a maximum duty cycle variation of 45/55. Functionality is uncertain
when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles rang-
ing between 50/50 and 45/55.
26. Referenced to each output group: x4 = DQS with DQ0-DQ3; x8 = DQS with DQ0-DQ7; x16 = LDQS with DQ0-
DQ7; and UDQS with DQ8-DQ15.
27. This limit is actually a nominal value and does not result in a fail value. CKE is HIGH during REFRESH command
period (tRFC [MIN]) else CKE is LOW (i.e., during standby).
28. To maintain a valid level, the transitioning edge of the input must:
a) Sustain a constant slew rate from the current AC level through to the target AC level, VIL(AC) or VIH(AC).
b) Reach at least the target AC level.
c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC).
29. The Input capacitance per pin group will not differ by more than this maximum amount for any given device..
30. CK and CK input slew rate must be 1V/ns.
31. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less
than 0.5V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100mv/ns reduction in slew rate.
If slew rate exceeds 4V/ns, functionality is uncertain.
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