参数资料
型号: W25Q128BVFIG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 128M X 1 SPI BUS SERIAL EEPROM, PDSO16
封装: 0.300 INCH, GREEN, SOIC-16
文件页数: 21/74页
文件大小: 855K
代理商: W25Q128BVFIG
W25Q128BV
- 28 -
7.2.12 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO0 and IO1. This allows data to be transferred from the W25Q128BV at
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to
RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in Figure 11. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out
clock.
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (3Bh)
High Impedance
8
9
10
28
29
30
32
33
34
35
36
37
38
39
6
4
2
0
24-Bit Address
23
22
21
3
2
1
0
*
31
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Dummy Clocks
0
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
7
5
3
1
6
4
2
0
6
4
2
0
6
4
2
0
High Impedance
7
5
3
1
7
5
3
1
7
5
3
1
IO
0 switches from
Input to Output
6
7
Data Out 1
* Data Out 2
* Data Out 3
* Data Out 4
= MSB
*
Figure 11. Fast Read Dual Output Instruction Sequence Diagram
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