参数资料
型号: W25Q16BVSSIG
厂商: Winbond Electronics
文件页数: 26/68页
文件大小: 0K
描述: IC SPI FLASH 16MBIT 8SOIC
标准包装: 90
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 16M(2M x 8)
速度: 104MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
W25Q16BV
11.2.11 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO 0 and IO 1 . This allows data to be transferred from the W25Q16BV at
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to
RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of F R (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks
is “don’t care”. However, the IO 0 pin should be high-impedance prior to the falling edge of the first data
out clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
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