参数资料
型号: W3E32M72S-266BC
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: DRAM
英文描述: 32M X 72 DDR DRAM, 0.75 ns, PBGA219
封装: 32 X 25 MM, PLASTIC, BGA-219
文件页数: 3/19页
文件大小: 739K
代理商: W3E32M72S-266BC
W3E32M72S-XBX
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(NOTES 1-5, 16)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage (36, 41)
VCC
2.3
2.7
V
I/O Supply Voltage (36, 41, 44)
VCCQ
2.3
2.7
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-2
2
μA
Input Leakage Address Current (All other pins not under test = 0V)
II
-10
10
μA
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
IOZ
-5
5
μA
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-16.8
-
mA
IOL
16.8
-
mA
Output Levels: Reduced drive option (38, 39)
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOHR
-9
-
mA
IOLR
9-
mA
I/O Reference Voltage (6,44)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (7, 44)
VTT
VREF - 0.04
VREF + 0.04
V
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
VREF +0.310
V
VIL
—VREF -0.310
V
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