参数资料
型号: W3E32M72S-266BC
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: DRAM
英文描述: 32M X 72 DDR DRAM, 0.75 ns, PBGA219
封装: 32 X 25 MM, PLASTIC, BGA-219
文件页数: 8/19页
文件大小: 739K
代理商: W3E32M72S-266BC
W3E32M72S-XBX
16
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
47. Random addressing changing: 50% of data changing at every transfer.
48. Random addressing changing: 100% of data changing at every transfer.
49. CKE must be active (high) during the entire time a refresh command is executed.
That is, from the time the AUTO REFRESH command is registered, CKE must be
active at each rising clock edge, until tRFC has been satised.
50. ICC2N species the DQ, DQS, and DQM to be driven to a valid high or low logic
level. ICC2Q is similar to ICC2F except ICC2Q species the address and control inputs
to remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is “worst case.”
51. Whenever the operating frequency is altered, not including jitter, the DLL is
required to be reset followed by 200 clock cycles before any READ command.
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20
MHz. Any noise above 20 MHz at the DRAM generated from any source other than
that of the DRAM itself may not exceed the DC coltage range of 2.6V ± 100mV.
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相关代理商/技术参数
参数描述
W3E32M72S-266BI 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk
W3E32M72S-266BM 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk
W3E32M72S-266SBC 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk
W3E32M72S-266SBI 制造商:White Electronic Designs 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, IND TEMP CUSTOM - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3E32M72S-266SBM 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 DDR SDRAM