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参数资料
| 型号： | W3E32M72S-266BC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 5/19页 |
| 文件大小： | 739K |
| 代理商： | W3E32M72S-266BC |
W3E32M72S-XBX
13
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
333 Mbs
CL 2.5
266 Mbs CL 2.5
200 CL 2
250 Mbs CL2.5
200 Mbs CL2
200 Mbs CL2.5
150 Mbs CL2
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Units
Access window of DQs from CK/CK#
tAC
-0.70
+0.70
-0.75
+0.75
-0.8
+0.8
-0.8
+0.8
ns
CK high-level width (30)
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK low-level width (30)
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock cycle time
CL = 2.5 (45, 51)
tCK (2.5)
7.5
13
7.5
13
8
13
10
13
ns
CL = 2 (45, 51)
tCK (2)
10
13
10
13
15
ns
DQ and DM input hold time relative to DQS (26, 31)
tDH
0.45
0.5
0.6
ns
DQ and DM input setup time relative to DQS (26, 31)
tDS
0.45
0.5
0.6
ns
DQ and DM input pulse width (for each input) (31)
tDIPW
1.75
2
ns
Access window of DQS from CK/CK#
tDQSCK
-0.6
+0.6
-0.75
+0.75
-0.8
+0.8
-0.8
+0.8
ns
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group, per access (25, 26)
tDQSQ
0.45
0.5
0.6
ns
Write command to rst DQS latching transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK rising - setup time
tDSS
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
tCK
Half clock period (34)
tHP
tCH, tCL
tCH,tCL
ns
Data-out high-impedance window from CK/CK# (18, 42)
tHZ
+0.70
+0.75
+0.8
ns
Data-out low-impedance window from CK/CK# (18, 42)
tLZ
-0.70
-0.75
-0.8
ns
Address and control input hold time (fast slew rate)
tIHF
0.75
0.90
1.1
ns
Address and control input setup time (fast slew rate)
tISF
0.75
0.90
1.1
ns
Address and control input hold time (slow slew rate) (14)
tIHS
0.8
1
1.1
ns
Address and control input setup time (slow slew rate) (14)
tISS
0.8
1
1.1
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
16
ns
DQ-DQS hold, DQS to rst DQ to go non-valid, per access (25, 26)
tQH
tHP - tQHS
tHP-tQHS
ns
Data hold skew factor
tQHS
0.55
0.75
1
ns
ACTIVE to PRECHARGE command (35)
tRAS
42
70,000
40
120,000
40
120,000
40
120,000
ns
ACTIVE to READ with Auto precharge command
tRAP
15
20
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
65
70
ns
AUTO REFRESH command period (49)
tRFC
72
75
80
ns
ACTIVE to READ or WRITE delay
tRCD
15
20
ns
PRECHARGE command period
tRP
15
20
ns
DQS read preamble (43)
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
DQS read postamble (43)
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
ACTIVE bank a to ACTIVE bank b command
tRRD
12
15
ns
DQS write preamble
tWPRE
0.25
tCK
DQS write preamble setup time (20, 21)
tWPRES
0
000
ns
DQS write postamble (19)
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
1
111
tCK
Data valid output window (25)
na
tQH - tDQSQ
ns
REFRESH to REFRESH command interval (23) (Commercial & Industrial only)
tREFC
70.3
μs
REFRESH to REFRESH command interval (23) (Military temperature only)*
tREFC
35
35.15
μs
Average periodic refresh interval (23) (Commercial & Industrial only)
tREFI
7.8
μs
Average periodic refresh interval (23) (Military temperature only)*
tREFI
3.8
3.9
μs
Terminating voltage delay to VDD
tVTD
0
000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
80
ns
Exit SELF REFRESH to READ command
tXSRD
200
tCK
* Self refresh available in commercial and industrial temperatures only.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
Notes 1-5, 14-17, 33
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72S-266BI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M72S-266BM | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M72S-266SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M72S-266SBI | 制造商:White Electronic Designs 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, IND TEMP CUSTOM - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72S-266SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 DDR SDRAM |
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