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参数资料
| 型号： | W3E32M72S-266BC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 4/19页 |
| 文件大小： | 739K |
| 代理商： | W3E32M72S-266BC |
W3E32M72S-XBX
12
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1-5, 10, 12, 14)
VCC, = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
MAX
333Mbs
250Mbs
266Mbs
200Mbs
Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and
DQS inputs changing once per clock cycle; Address and control inputs changing once every two clock
cycles; (22, 48)
ICC0
650
575
mA
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN);
IOUT = 0mA; Address and control inputs changing once per clock cycle (22, 48)
ICC1
800
725
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK
(MIN); CKE = LOW; (23, 32, 50)
ICC2P
25
mA
IDLE STANDBY CURRENT: CS# = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and
other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (51)
ICC2F
225
200
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN);
CKE = LOW (23, 32, 50)
ICC3P
175
150
mA
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS
(MAX); tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other
control inputs changing once per clock cycle (22)
ICC3N
250
225
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control
inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 48)
ICC4R
825
725
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control
inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per
clock cycle (22)
ICC4W
975
755
675
mA
AUTO REFRESH CURRENT
tREF = tRC (MIN) (27, 50)
ICC5
1,450
1,400
mA
tREF = 7.8125μs (27, 50)
ICC5A
50
mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
Standard (11)
ICC6
25
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN);
tCK = tCK (MIN); Address and control inputs change only during Active READ or WRITE commands. (22,
49)
ICC7
2,025
2,000
1,750
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72S-266BI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M72S-266BM | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M72S-266SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M72S-266SBI | 制造商:White Electronic Designs 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, IND TEMP CUSTOM - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72S-266SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 DDR SDRAM |
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