参数资料
型号: W9425G6EB-6I
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PBGA60
封装: 8 X 13 MM, ROHS COMPLIANT, TFBGA-60
文件页数: 15/51页
文件大小: 2017K
代理商: W9425G6EB-6I
W9425G6EB
Publication Release Date:Feb. 12, 2009
- 22 -
Revision A02
8.3 Function Truth Table for CKE
CKE
CURRENT
STATE
n-1
n
CS
RAS CAS
WE
ADDRESS
ACTION
NOTES
H
X
INVALID
L
H
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
L
X
ILLEGAL
L
H
L
X
ILLEGAL
Self Refresh
L
X
Maintain Self Refresh
H
X
INVALID
L
H
X
Exit Power down->Idle after tIS
Power Down
L
X
Maintain power down mode
H
X
Refer to Function Truth Table
H
L
H
X
Enter Power down
2
H
L
H
X
Enter Power down
2
H
L
H
X
Self Refresh
1
H
L
H
L
X
ILLEGAL
H
L
X
ILLEGAL
All banks Idle
L
X
Power down
H
X
Refer to Function Truth Table
H
L
H
X
Enter Power down
3
H
L
H
X
Enter Power down
3
H
L
H
X
ILLEGAL
H
L
H
L
X
ILLEGAL
H
L
X
ILLEGAL
Row Active
L
X
Power down
Any State
Other Than
Listed Above
H
X
Refer to Function Truth Table
Notes
:
1. Self refresh can enter only from the all banks idle state.
2. Power Down occurs when all banks are idle; this mode is referred to as precharge power down.
3. Power Down occurs when there is a row active in any bank; this mode is referred to as active power down.
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data
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