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参数资料
| 型号： | W9425G6EB-6I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| 封装： | 8 X 13 MM, ROHS COMPLIANT, TFBGA-60 |
| 文件页数： | 7/51页 |
| 文件大小： | 2017K |
| 代理商： | W9425G6EB-6I |
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W9425G6EB
Publication Release Date:Feb. 12, 2009
- 15 -
Revision A02
7.10.2 Addressing Mode Select (A3)
The Addressing Mode can be one of two modes; Interleave mode or Sequential Mode, When the
A3 bit is "0", Sequential mode is selected. When the A3 bit is "1", Interleave mode is selected. Both
addressing Mode support burst length 2, 4, and 8 words.
A3
ADDRESSING MODE
0
Sequential
1
Interleave
7.10.2.1. Addressing Sequence of Sequential Mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
2 words (address bits is A0)
Data 1
n + 1
not carried from A0 to A1
Data 2
n + 2
4 words (address bit A0, A1)
Data 3
n + 3
Not carried from A1 to A2
Data 4
n + 4
Data 5
n + 5
8 words (address bits A2, A1 and A0)
Data 6
n + 6
Not carried from A2 to A3
Data 7
n + 7
7.10.2.2. Addressing Sequence for Interleave Mode
A Column access is started from the inputted column address and is performed by interleaving the
address bits in the sequence shown as the following.
Addressing Sequence of Interleave Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
2 words
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
4 words
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
8 words
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
相关PDF资料 |
PDF描述 |
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| W9712G6JB-3 | 8M X 16 DDR DRAM, 0.45 ns, PBGA84 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6EH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
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