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参数资料
| 型号： | W9425G6EB-6I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| 封装： | 8 X 13 MM, ROHS COMPLIANT, TFBGA-60 |
| 文件页数： | 34/51页 |
| 文件大小： | 2017K |
| 代理商： | W9425G6EB-6I |
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W9425G6EB
Publication Release Date:Feb. 12, 2009
- 4 -
Revision A02
1. GENERAL DESCRIPTION
W9425G6EB is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM), organized as 4,194,304 words
× 4 banks × 16 bits. W9425G6EB delivers a data bandwidth
of up to 400M words per second (-5). To fully comply with the personal computer industrial standard,
W9425G6EB is sorted into two speed grades: -5 and -6I. The -5 is compliant to the DDR400/CL3
specification. The -6I is compliant to the DDR333/CL3 specification (the -6I grade which is guaranteed
to support -40°C ~ 85°C).
All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
point for the differential clock is when the CLK and CLK signals cross during a transition. Write and
Read data are synchronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9425G6EB is ideal for main memory in
high performance applications.
2. FEATURES
2.5V
±0.2V Power Supply
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8S refresh interval (8K/ 64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in TFBGA 60 Ball (8X13 mm
2), using Lead free materials with RoHS compliant
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| W9712G6JB-3 | 8M X 16 DDR DRAM, 0.45 ns, PBGA84 |
| W981616CH-5 | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6EH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
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