参数资料
型号: W9425G6EB-6I
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PBGA60
封装: 8 X 13 MM, ROHS COMPLIANT, TFBGA-60
文件页数: 43/51页
文件大小: 2017K
代理商: W9425G6EB-6I
W9425G6EB
Publication Release Date:Feb. 12, 2009
- 48 -
Revision A02
11.23 Auto Refresh Cycle
CMD
CLK
PREA
AREF
CMD
NOP
tRP
tRFC
Note: CKE has to be kept “High” level for Auto-Refresh cycle.
11.24 Precharged/Active Power Down Mode Entry and Exit Timing
CMD
CLK
NOP
CMD
NOP
Exit
Entry
CMD
NOP
tIH
tIS
tCK
tIH
tIS
CKE
Precharge/Activate
Note 1,2
Note:
1. If power down occurs when all banks are idle, this mode is referred to as precharge power down.
2. If power down occurs when there is a row active in any bank, this mode is referred to as active power down.
11.25 Input Clock Frequency Change during Precharge Power Down Mode Timing
NOP
DLL
RESET
NOP
CMD
200 clocks
tIS
Frequency Change
Occurs here
Minmum 2 clocks
required before
changing frequency
Stable new clock
before power down exit
CLK
CMD
CKE
tRP
相关PDF资料
PDF描述
W965L6ABN80I 2M X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
W9712G6JB-3 8M X 16 DDR DRAM, 0.45 ns, PBGA84
W981616CH-5 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
W986408AH-10 8M X 8 SYNCHRONOUS DRAM, 8 ns, PDSO54
W986408BH-8N 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
相关代理商/技术参数
参数描述
W9425G6EH 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM
W9425G6EH_0812 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM
W9425G6EH-5 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
W9425G6EH-5I 制造商:Winbond Electronics Corp 功能描述:
W9425G6JB-5 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA