参数资料
型号: W9425G6EB-6I
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PBGA60
封装: 8 X 13 MM, ROHS COMPLIANT, TFBGA-60
文件页数: 17/51页
文件大小: 2017K
代理商: W9425G6EB-6I
W9425G6EB
Publication Release Date:Feb. 12, 2009
- 24 -
Revision A02
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
Voltage on I/O Pins Relative to VSS
VIN, VOUT
-0.5 ~ VDDQ +0.5
V
Voltage on Input Pins Relative to VSS
VIN
-1 ~ 3.6
V
Voltage on VDD Supply Relative to VSS
VDD
-1 ~ 3.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
-1 ~ 3.6
V
Operating Temperature (-5)
TOPR
0 ~ 70
°C
Operating Temperature (-6I)
TOPR
-40 ~ 85
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Soldering Temperature (10s)
TSOLDER
260
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOUT
50
mA
Note: Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -5, TA = -40 to 85°C for -6I)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
NOTES
VDD
Supply Voltage
2.3
2.5
2.7
V
2
VDDQ
Supply Voltage for I/O Buffer
2.3
2.5
2.7
V
2
VREF
Input reference Voltage
0.49 x VDDQ
0.50 x VDDQ
0.51 x VDDQ
V
2, 3
VTT
Termination Voltage (System)
VREF - 0.04
VREF
VREF + 0.04
V
2, 8
VIH (DC)
Input High Voltage (DC)
VREF + 0.15
-
VDDQ + 0.3
V
2
VIL (DC)
Input Low Voltage (DC)
-0.3
-
VREF - 0.15
V
2
VICK (DC)
Differential Clock DC Input Voltage
-0.3
-
VDDQ + 0.3
V
15
VID (DC)
Input Differential Voltage.
CLK and CLK inputs (DC)
0.36
-
VDDQ + 0.6
V
13, 15
VIH (AC)
Input High Voltage (AC)
VREF + 0.31
-
V
2
VIL (AC)
Input Low Voltage (AC)
-
VREF - 0.31
V
2
VID (AC)
Input Differential Voltage.
CLK and CLK inputs (AC)
0.7
-
VDDQ + 0.6
V
13, 15
VX (AC)
Differential AC input Cross Point
Voltage
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
12, 15
VISO (AC)
Differential Clock AC Middle Point
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
14, 15
Notes: Undershoot Limit: VIL (min) = -1.5V with a pulse width < 5 nS
Overshoot Limit: VIH (max) = VDDQ +1.5V with a pulse width < 5 nS
VIH (DC) and VIL (DC) are levels to maintain the current logic state.
VIH (AC) and VIL (AC) are levels to change to the new logic state.
相关PDF资料
PDF描述
W965L6ABN80I 2M X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
W9712G6JB-3 8M X 16 DDR DRAM, 0.45 ns, PBGA84
W981616CH-5 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
W986408AH-10 8M X 8 SYNCHRONOUS DRAM, 8 ns, PDSO54
W986408BH-8N 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
相关代理商/技术参数
参数描述
W9425G6EH 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM
W9425G6EH_0812 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM
W9425G6EH-5 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
W9425G6EH-5I 制造商:Winbond Electronics Corp 功能描述:
W9425G6JB-5 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA