参数资料
型号: W981216DH-75
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件页数: 14/44页
文件大小: 1221K
代理商: W981216DH-75
W981216DH/ W9812G6DH
Publication Release Date: June 6, 2005
- 21 -
Revision A08
Timing Waveforms, continued
13.4 Mode Register Set Cycle
A0
A1
A2
A3
A4
A5
A6
Burst Length
Addressing Mode
CAS Latency
(Test Mode)
A8
Reserved
A0
A7
A0
A9
A0
Write Mode
A10
A0
A11
BS0
"0"
A0
A3
A0
Addressing Mode
A0
0
A0
Sequential
A0
1
A0
Interleave
A0
A9
Single Write Mode
A0
0
A0
Burst read and Burst write
A0
1
A0
Burst read and single write
A0
A2 A1 A0
A0
0
A0
0
1
A0
0
1
0
A0
0
1
A0
1
0
A0
1
0
1
A0
1
0
A0
1
A0
Burst Length
A0
Sequential
A0
Interleave
1
A0
1
A0
2
A0
2
A0
4
A0
4
A0
8
A0
8
A0
Reserved
A0
Reserved
A0
Full Page
A0
CAS Latency
A0
Reserved
A0
Reserved
2
A0
3
Reserved
A0
A6 A5 A4
A0
0
A0
0
1
0
A0
0
1
A0
1
0
A0
0
1
tRSC
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tAS
tAH
CLK
CS
RAS
CAS
WE
A0-A11
BS0,1
Register
set data
next
command
A0
Reserved
"0"
BS1
"0"
相关PDF资料
PDF描述
W972GG8JB-25 256M X 8 DDR DRAM, 0.4 ns, PBGA60
WF512K32-150CJC 512K X 32 FLASH 5V PROM MODULE, 150 ns, CQCC68
W73B586A-09L 32K X 18 CACHE SRAM, 9 ns, PQCC52
WS512K32-100G4TM 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68
WS512K32-35G4M 2M X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
相关代理商/技术参数
参数描述
W9812G2GB 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GB-6 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GB-6I 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GB-75 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GH 制造商:WINBOND 制造商全称:Winbond 功能描述:a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words 】 4 banks 】 32 bits