参数资料
型号: W989D2CBJX6E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, 5.4 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数: 52/67页
文件大小: 1469K
代理商: W989D2CBJX6E
W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 56 -
Revision A01-004
10.16 Deep Power Down Mode Exit
0
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23
tCKS
All Banks Precharge
CLK
DQ
CKE
DQM
A10
Address
WE
CAS
RAS
CS
Deep Power Down Exit
tRP
tRSC
OP-Code
DSL
200μs
Mode Register Set
Extended Mode
Register Set Auto Refresh
Auto Refresh
Issue Auto Refresh cycle two or more
Arbitrary Cycle
Note:
The device exits the Deep Power Down Mode asynchronously at the rising edge of the CKE signal.
After CKE goes high, the Device Deselect or No-operation command must be register at the immediately
following CLK rising edge, and CKE must remain high at least for tCKS delay immediately after exiting the
Deep Power Down Mode.
tRCF
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参数描述
W989D2CBJX6I 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR
W989D2CBJX7E 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPSDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W989D2CBJX7G 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR
W989D2KBJX6E 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 90VFBGA
W989D2KBJX6I 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 90VFBGA