参数资料
型号: W989D2CBJX6E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, 5.4 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数: 54/67页
文件大小: 1469K
代理商: W989D2CBJX6E
W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 58 -
Revision A01-004
10.18 Auto Precharge Timing (Write Cycle)
0
1
3
2
(1) burst length = 1
DQ
4
5
7
6
8
9
11
10
Write
D0
Act
AP
Command
(2) burst length = 2
DQ
Write
D0
Act
AP
Command
tRP
D1
(3) burst length = 4
DQ
Write
D0
Act
AP
Command
tRP
D1
(4) burst length = 8
DQ
Write
D0
Act
AP
Command
tRP
D1
D2
D3
D2
D3
D4
D5
D6
D7
tWR
12
Wirte
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate
command to the start of internal precgarging must be at least tRAS (min).
“Dn” = Write data, and “Qn” = Read data
represents the Write with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note:
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相关代理商/技术参数
参数描述
W989D2CBJX6I 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR
W989D2CBJX7E 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPSDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W989D2CBJX7G 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR
W989D2KBJX6E 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 90VFBGA
W989D2KBJX6I 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 90VFBGA