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参数资料
| 型号： | W989D2CBJX6E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5.4 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 67/67页 |
| 文件大小： | 1469K |
| 代理商： | W989D2CBJX6E |
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W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 9 -
Revision A01-004
(x32)
PARAMETER / CONDITION
SYM.
-6
-75
UNIT
NOTES
MAX.
Operating current:
Active mode, 1 bank, BL = 1, tRC = tRC (min), Iout=0mA,
Active Precharge command cycling without burst operation.
IDD1
38
35
mA
2, 3, 4
Standby current:
Power-down mode, All banks idle, CKE = LOW.
Idd2P
Low
power
0.6
mA
5
Normal
power
0.8
Standby current:
Nonpower-down mode, All banks idle, CKE = HIGH.
Idd2N
10
mA
Standby current:
Active mode; CKE = LOW, CS# = HIGH, All banks active,
No accesses in progress.
Idd3P
5
mA
3, 4, 6
Standby current:
Active mode, CKE = HIGH, CS# = HIGH, All banks active after
tRCD met,
No accesses in progress.
Idd3N
15
mA
3, 4, 6
Operating current:
Burst mode, All banks active, Iout=0mA,
READ/WRITE command cycling,
Idd4
75
70
mA
2, 3, 4
Auto refresh current:
tRFC=tRFC (MIN), Auto refresh command cycling
Idd5
75
mA
2, 3, 4, 6
Deep Power Down Mode
Izz
10
μA
5,8
Notes:
1.
A full initialization sequence is required before proper device operation is ensured.
2.
Idd is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the
outputs open.
3.
The Idd current will increase or decrease proportionally according to the amount of frequency alteration for the test
condition.
4.
Address transitions average one transition every 2 clocks.
5.
Measurement is taken 500ms after entering into this operating mode to provide tester measuring unit settling time.
6.
Other input signals can transition only one time for every 2 clocks and are otherwise at valid Vih or Vil levels.
7.
CKE is HIGH during the REFRESH command period tRFC (MIN) else CKE is LOW. The Idd7 limit is a nominal value
and does not result in a fail value.
8.
Typical values at 25°C (not a maximum value).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W989D2CBJX6I | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR |
| W989D2CBJX7E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPSDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W989D2CBJX7G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR |
| W989D2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 90VFBGA |
| W989D2KBJX6I | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 90VFBGA |
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