- 您现在的位置：买卖IC网 > PDF目录370033 > 256MBDDRSDRAM (SAMSUNG SEMICONDUCTOR CO. LTD.) DDR SDRAM Specification Version 0.3 PDF资料下载
参数资料
| 型号： | 256MBDDRSDRAM |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 0.3 |
| 中文描述： | DDR SDRAM的规格版本0.3 |
| 文件页数： | 32/51页 |
| 文件大小： | 658K |
| 代理商： | 256MBDDRSDRAM |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页当前第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页
- 32 -
REV. 0.3 November 2. 2000
256Mb DDR SDRAM
4. Command Truth Table
Preliminary
Table 8. Command truth table
(V=Valid, X=Don
′
t Care, H=Logic High, L=Logic Low)
COMMAND
CKEn-1
CKEn
CS
RAS
CAS
WE
BA
0,1
A
10
/AP
A
11,
A
9
~ A
0
Note
Register
Extended MRS
H
X
L
L
L
L
OP CODE
1, 2
Register
Mode Register Set
H
X
L
L
L
L
OP CODE
1, 2
Refresh
Auto Refresh
H
H
L
L
L
H
X
3
Self
Refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
V
Row Address
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
V
L
Column
Address
4
Auto Precharge Enable
H
4
Write &
Column Address
Auto Precharge Disable
H
X
L
H
L
L
V
L
Column
Address
4
Auto Precharge Enable
H
4, 6
Burst Stop
H
X
L
H
H
L
X
7
Precharge
Bank Selection
H
X
L
L
H
L
V
L
X
All Banks
X
H
5
Active Power Down
Entry
H
L
H
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
Precharge Power Down Mode
Entry
H
L
H
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
L
V
V
V
DM
H
X
X
8
No operation (NOP) : Not defined
H
X
H
X
X
X
X
9
L
H
H
H
9
1. OP Code : Operand Code. A
0
~ A
11
& BA
0
~ BA
1
: Program keys. (@EMRS/MRS)
2.EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If both BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank B is selected.
If both BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
5. If A
10
/AP is "High" at row precharge, BA
0
and BA
1
are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
相关PDF资料 |
PDF描述 |
|---|---|
| 25AV5-GA | FOR TV HORIZONTAL-DEFLECTION AMPLIFIER APPLICATIONS |
| 25CV100BE | Surface Mount Type Miniature, Super low profile 3.9mm height |
| 25CV10BE | Surface Mount Type Miniature, Super low profile 3.9mm height |
| 25CV68BE | Surface Mount Type Miniature, Super low profile 3.9mm height |
| 25CV22BE | Surface Mount Type Miniature, Super low profile 3.9mm height |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 256MB-FD | 制造商:PNY Technologies 功能描述:256MB USB, FOR IBM - Bulk |
| 256MB-FLASH | 制造商:STMicroelectronics 功能描述: |
| 256ME-250K | 制造商:ILLINOISCAPACITOR 制造商全称:Illinois Capacitor, Inc. 功能描述:Metallized Polyester Motor Run/AC Film Capacitors In Boxes |
| 256ME-350K | 制造商:ILLINOISCAPACITOR 制造商全称:Illinois Capacitor, Inc. 功能描述:Metallized Polyester Motor Run/AC Film Capacitors In Boxes |
| 256ME-400K | 制造商:ILLINOISCAPACITOR 制造商全称:Illinois Capacitor, Inc. 功能描述:Metallized Polyester Motor Run/AC Film Capacitors In Boxes |
发布紧急采购，3分钟左右您将得到回复。