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参数资料
| 型号： | 256MBDDRSDRAM |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 0.3 |
| 中文描述： | DDR SDRAM的规格版本0.3 |
| 文件页数： | 36/51页 |
| 文件大小： | 658K |
| 代理商： | 256MBDDRSDRAM |
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- 36 -
REV. 0.3 November 2. 2000
256Mb DDR SDRAM
Preliminary
Table 9-4. Functional truth table
ABBREVIATIONS :
H=High Level, L=Low level, X=Don
′
t Care
Note :
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state ; function may be legal in the bank indicated by BA, depending on the state of that bank.
3. Must satisfy bus contention, bus turn around and write recovery requirements.
4. NOP to bank precharging or in idle sate. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to "Read with Auto Precharge" in page 85 for detailed information.
7. Refer to "Write with Auto Precharge" in page 86 for detailed information.
8. CKE Low to High transition will re-enable CK, CK and other inputs asynchronously. A minimum setup time must be satisfied
before issuing any command other than EXIT.
9. Power-Down and Self-Refresh can be entered only from All Bank Idle state.
ILLEGAL = Device operation and/or data integrity are not guaranteed.
Current State
CKE
n-1
CKE
n
CS
RAS
CAS
WE
Add
Action
SELF-
REFRESHING
*8
L
H
H
X
X
X
X
Exit Self-Refresh
L
H
L
H
H
H
X
Exit Self-Refresh
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOPeration(Maintain Self-Refresh)
POWER
DOWN
L
H
X
X
X
X
X
Exit Power Down(Idle after tPDEX)
L
L
X
X
X
X
X
NOPeration(Maintain Power Down)
ALL BANKS
IDLE
*9
H
H
X
X
X
X
X
Refer to Function True Table
H
L
L
L
L
H
X
Enter Self-Refresh
H
L
H
X
X
X
X
Enter Power Down
H
L
L
H
H
H
X
Enter Power Down
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
L
X
X
X
X
X
X
Refer to Current State=Power Down
ANY STATE
other than
listed above
H
H
X
X
X
X
X
Refer to Function Truth Table
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