参数资料
型号: 256MBDDRSDRAM
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 0.3
中文描述: DDR SDRAM的规格版本0.3
文件页数: 5/51页
文件大小: 658K
代理商: 256MBDDRSDRAM
- 5 -
REV. 0.3 November 2. 2000
256Mb DDR SDRAM
Preliminary
Table 1 : Operating frequency and DLL jitter 8
Table 2. : Column address configurtion
Table 3 : Input/Output function description 10
Table 4 : Burst address ordering for burst length
Table 5 : Bank selection for precharge by bank address bits 17
Table 6 : Operating description when new command asserted while
read with auto precharge is issued
Table 7 : Operating description when new command asserted while
write with auto precharge is issued
Table 8 : Command truth table
Table 9-1 : Functional truth table 33
Table 9-2 : Functional truth table (contiued)
Table 9-3 : Functional truth table (contiued) 35
Table 9-4 : Functional truth table (contiued)
Table 10 : Absolute maximum raings
Table 11 : DC operating condtion
Table 12 : DDR SDRAM spec Items and Test Conditions
Table 13 : DDR SDRAM IDD spec Table
Table 14 : AC operating condition
Table 15 : AC timing parameters and specifications
Table 16 : AC operating test conditions
Table 17 : Input/Output capacitance
Table 18 : Pull down and pull up current values for normal strength driver
Table 19 : Pull down and pull up current values for half strength driver
List of tables
9
15
28
29
32
34
36
37
37
38
40
41
43
44
44
46
48
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