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参数资料
| 型号： | 256MBDDRSDRAM |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 0.3 |
| 中文描述： | DDR SDRAM的规格版本0.3 |
| 文件页数： | 34/51页 |
| 文件大小： | 658K |
| 代理商： | 256MBDDRSDRAM |
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- 34 -
REV. 0.3 November 2. 2000
256Mb DDR SDRAM
Preliminary
Table 9-2. Functional truth table
Current State
CS
RAS
CAS
WE
Address
Command
Action
READ with
AUTO
PRECHARGE
*6
(READA)
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
*6
L
H
L
L
BA, CA, A10
WRITE/WRITEA
ILLEGAL
L
L
H
H
BA, RA
Active
*6
L
L
H
L
BA, A10
PRE/PREA
*6
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
WRITE with
AUTO
RECHARGE
*7
(WRITEA)
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
*7
L
H
L
L
BA, CA, A10
WRITE/WRITEA
*7
L
L
H
H
BA, RA
Active
*7
L
L
H
L
BA, A10
PRE/PREA
*7
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
PRECHARGING
(DURING tRP)
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
NOP*4(Idle after tRP)
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
ROW
ACTIVATING
(FROM ROW
ACTIVE TO
tRCD)
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
WRITE
RECOVERING
(DURING tWR
OR tCDLR)
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
H
BA, CA, A10
READ
ILLEGAL*2
L
H
L
L
BA, CA, A10
WRITE
WRITE
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
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