参数资料
型号: ADP3198JCPZ-RL
厂商: ON Semiconductor
文件页数: 23/31页
文件大小: 0K
描述: IC BUCK CTRLR 8BIT PROG 40LFCSP
产品变化通告: MFG CHG Notification ADI to ON Semi
标准包装: 2,500
应用: 控制器,Intel VRM
输入电压: 12V
输出数: 4
输出电压: 0.5 V ~ 1.6 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 40-VFQFN 裸露焊盘,CSP
供应商设备封装: 40-LFCSP-VQ(6x6)
包装: 带卷 (TR)
ADP3198
Equation 20 gives the designer a rough approximation for
determining the minimum ceramic capacitance. Due to the
complexity of the PCB parasitics and bulk capacitors, the actual
amount of ceramic capacitance required can vary.
This example uses 18, 10 μF 1206 MLC capacitors ( C Z = 180 μF).
The VID on-the-fly step change is 450 mV in 230 μs with a
settling error of 2.5 mV. The maximum allowable load release
overshoot for this example is 50 mV, therefore, solving for the
1 ? 1 ? 1 ? Δ I O ?
C Z ( MIN ) ≥
× ?
× ? ? D ? ?
?
?
320 nH × 100 A
C X ( MIN ) ≤ ?
? ? 4 × ? ? 1 . 0 mΩ +
? × 1 . 3 V
100 A ?
?
?
? ?
(20)
R O ? f SW ? n ? 2 S R ?
The typical ceramic capacitors consist of multiple 10 μF or
22 μF capacitors. For this example, Equation 20 yields 180.8 μF,
so eighteen, 10 μF ceramic capacitors suffice.
Next, there is an upper limit imposed on the total amount of
bulk capacitance yields
?
?
? ? 50 mV ?
?
?
?
?
? 180 μF ? = 3 . 92 mF
?
?
bulk capacitance (C X ) when the user considers the VID on-the-
fly voltage stepping of the output (voltage step V V in time t V
with error of V ERR ).
C X ( MAX ) ≤
320 nH × 450 mV
4 × 5 . 2 2 × ( 1 . 0 m Ω ) 2 × 1 . 3 V
×
? 230 μs × 1 . 3 V × 4 × 5 . 2 × 1 . 0 m Ω ?
?
?
? ? 1 ? ? 180 μF = 43.0 mF
? 1 + ?
?
A lower limit is based on meeting the capacitance for load
release for a given maximum load step (ΔI O ) and a maximum
allowable overshoot. The total amount of load release voltage
is given as Δ V O = Δ I O × R O + Δ V rl , where Δ V rl is the maximum
allowable overshoot voltage.
? 2 ?
? ?
?
? ? 450 mV × 320 nH ? ?
?
L × Δ I O
? n × ? ? R + Δ V rl ? ? × V
Δ I O ? ?
?
?
?
?
?
C X ( MIN ) ≥ ?
?
C X ( MAX ) ≤
? ? O VID
?
?
? C Z ?
?
?
(21)
(22)
where K = 5.2.
Using 10, 560 μF Al-Poly capacitors with a typical ESR of 6 mΩ
each yields C X = 5.6 mF with an R X = 0.6 mΩ.
One last check should be made to ensure that the ESL of the
bulk capacitors (L X ) is low enough to limit the high frequency
ringing during a load change.
?
?
V V
?
× ? 1 + ? ? t V VID ×
×
nK R O
V VID
V V
?
?
where K = ? 1 n ? ? ERR
? .
? V V
?
?
?
? ? 1 ? ? C Z
?
L X ≤ 180 μF × ( 1 mΩ ) 2 ×
4
2 2
? V ?
?
?
L V
nKR O
L
2 ?
? ?
This is tested using
L X ≤ C Z × R O 2 × Q 2
(23)
= 24 0 pH
3
where Q 2 is limited to 4 / 3 to ensure a critically damped system.
To meet the conditions of these equations and transient
response, the ESR of the bulk capacitor bank (R X ) should be less
than two times the droop resistance (R O ). If the C X(MIN) is larger
than C X(MAX) , the system cannot meet the VID on-the-fly speci-
fication and can require the use of a smaller inductor or more
phases (and may have to increase the switching frequency to
keep the output ripple the same).
In this example, L X is approximately 240 pH for the 10, Al-Poly
capacitors, which satisfies this limitation. If the L X of the chosen
bulk capacitor bank is too large, the number of ceramic
capacitors needs to be increased, or lower ESL bulks need to be
used if there is excessive undershoot during a load transient.
For this multimode control technique, all ceramic designs can
be used providing the conditions of Equation 20 through
Equation 23 are satisfied.
Rev. 2 | Page 23 of 31 | www.onsemi.com
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