参数资料
| 型号： | ADP3198JCPZ-RL |
| 厂商： | ON Semiconductor |
| 文件页数： | 26/31页 |
| 文件大小： | 0K |
| 描述： | IC BUCK CTRLR 8BIT PROG 40LFCSP |
| 产品变化通告： | MFG CHG Notification ADI to ON Semi |
| 标准包装： | 2,500 |
| 应用： | 控制器，Intel VRM |
| 输入电压： | 12V |
| 输出数： | 4 |
| 输出电压： | 0.5 V ~ 1.6 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-VFQFN 裸露焊盘，CSP |
| 供应商设备封装： | 40-LFCSP-VQ（6x6） |
| 包装： | 带卷 (TR) |
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ADP3198
Because of the multimode feedback structure of the ADP3198,
Tuning the ADP3198 section).
the feedback compensation must be set to make the converter
output impedance work in parallel with the output decoupling
to make the load look entirely resistive. Compensation is
needed for several poles and zeros created by the output
inductor and the decoupling capacitors (output filter).
A type-three compensator on the voltage feedback is adequate
for proper compensation of the output filter. Equation 35 to
Equation 39 are intended to yield an optimal starting point for
the design; some adjustments may be necessary to account for
PCB and component parasitic effects (see the
First, compute the time constants for all the poles and zeros in the system using Equation 35 to Equation 39.
R E = n × R O + A D × R DS +
R L × V RT
V VID
+
2 × L × ( 1 ? n × D ) × V RT
n × C X × R O × V VID
R E = 4 × 1 m Ω + 5 × 2.4 m Ω +
1.4 mΩ × 0. 51 V
1.3 V
+
2 × 320 nH × ( 1 ? 0.432 ) × 0. 51 V
4 × 5 . 6 mF × 1 m Ω × 1.3 V
= 2 2 . 9 m Ω
(35)
× O
T A = C X × ( R O ? R ' ) +
L X
R O
R ? R '
R X
= 5 . 6 mF × ( 1 m Ω ? 0.5 m Ω ) +
240 pH
1 m Ω
×
1 mΩ ? 0.5 mΩ
0.6 m Ω
= 3 . 0 0 μs
(36)
T B = ( R X + R ' ? R O ) × C X = ( 0.6 m Ω + 0.5 m Ω ? 1 m Ω ) × 5 . 6 mF = 5 6 0 ns
(37)
A × R DS
V RT × ? L ? D
2 × f SW
?
?
? =
0. 51 V × ? 320 nH ?
?
2 × 330 kHz ? ?
?
T C =
?
?
V VID × R E
?
?
? 5 × 2.4 mΩ ?
?
1.3 V × 2 2 . 9 m Ω
= 5 . 17 μs
(38)
T D =
C X × C Z × R O 2
C X × ( R O ? R ' ) + C Z × R O
=
5 . 6 mF × 180 μF × ( 1 m Ω ) 2
5 . 6 mF × ( 1 m Ω ? 0.5 m Ω ) + 180 μF × 1 m Ω
= 33 8 ns
(39)
where:
R ' is the PCB resistance from the bulk capacitors to the ceramics.
R DS is the total low-side MOSFET on resistance per phase.
In this example, A D is 5, V RT equals 0.51 V, R ' is approximately 0.5 mΩ (assuming a 4-layer, 1 ounce motherboard), and L X is 240 pH for
the 10 Al-Poly capacitors.
n × R O × T A 4 × 1 m Ω × 3 . 0 0 μs
R E × R B
C A = = = 524 pF
C FB =
T D 33 8 ns
The compensation values can then be solved using
2 2 . 9 m Ω × 1. 00 k Ω
(40)
= = 34 . 2 pF
R A 9 . 87 k Ω
These are the starting values prior to tuning the design that
(43)
R A =
C B =
T C
C A
T B
R B
=
=
5 .17 μs
524 pF
5 6 0 ns
1. 00 k Ω
= 9 . 87 k Ω
= 560 pF
(41)
(42)
account for layout and other parasitic effects (see the Tuning
the ADP3198 section). The final values selected after tuning are
C A = 560 pF
R A = 10.0 kΩ
C B = 560 pF
C FB = 27 pF
Rev. 2 | Page 26 of 31 | www.onsemi.com
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