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| 型号： | BQ4014YMB-120 |
| 厂商： | Texas Instruments |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 2MBIT 120NS 32DIP |
| 标准包装： | 15 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 2M (256K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-DIP 模块（0.61"，15.49mm） |
| 供应商设备封装： | 32-DIP 模块（18.42x52.96） |
| 包装： | 管件 |
bq4014/bq4014Y
Functional Description
When power is valid, the bq4014 operates as a standard
CMOS SRAM. During power-down and power-up cycles,
the bq4014 acts as a nonvolatile memory, automatically
protecting and preserving the memory contents.
Power-down/power-up control circuitry constantly
monitors the V CC supply for a power-fail-detect threshold
V PFD . The bq4014 monitors for V PFD = 4.62V typical for
use in systems with 5% supply tolerance. The bq4014Y
monitors for V PFD = 4.37V typical for use in systems with
10% supply tolerance.
When V CC falls below the V PFD threshold, the SRAM
automatically write-protects the data. All outputs
become high impedance, and all inputs are treated as
“don’t care.” If a valid access is in process at the time of
power-fail detection, the memory cycle continues to com-
pletion. If the memory cycle fails to terminate within
time t WPT , write-protection takes place.
Truth Table
As V CC falls past V PFD and approaches 3V, the control
circuitry switches to the internal lithium backup supply,
which provides data retention until valid V CC is applied.
When V CC returns to a level above the internal backup
cell voltage, the supply is switched back to V CC . After
V CC ramps above the V PFD threshold, write-protection
continues for a time t CER (120ms maximum) to allow for
processor stabilization. Normal memory operation may
resume after this time.
The internal coin cells used by the bq4014 have an
extremely long shelf life and provide data retention for
more than 10 years in the absence of system power.
As shipped from Benchmarq, the integral lithium cells
are electrically isolated from the memory. (Self-discharge
in this condition is approximately 0.5% per year.)
Following the first application of V CC , this isolation is
broken, and the lithium backup provides data retention
on subsequent power-downs.
Mode
Not selected
Output disable
Read
Write
CE
H
L
L
L
WE
X
H
H
L
OE
X
H
L
X
I/O Operation
High Z
High Z
D OUT
D IN
Power
Standby
Active
Active
Active
Absolute Maximum Ratings
Symbol
V CC
V T
T OPR
T STG
T BIAS
T SOLDER
Parameter
DC voltage applied on V CC relative to V SS
DC voltage applied on any pin excluding V CC
relative to V SS
Operating temperature
Storage temperature
Temperature under bias
Soldering temperature
Value
-0.3 to 7.0
-0.3 to 7.0
0 to +70
-40 to +70
-10 to +70
+260
Unit
V
V
°C
°C
°C
°C
Conditions
V T ≤ V CC + 0.3
For 10 seconds
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation
should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to
conditions beyond the operational limits for extended periods of time may affect device reliability.
Sept. 1992
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BQ4014YMB-85 | 功能描述:NVRAM 256Kx8 Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| BQ4015 | 制造商:TI 制造商全称:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
| BQ4015_07 | 制造商:TI 制造商全称:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
| BQ4015LYMA-70N | 功能描述:NVRAM 512Kx8 Nonvol SRAM 3.3V In 10% Vltg Tol RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| BQ4015MA-120 | 制造商:TI 制造商全称:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
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