参数资料
型号: DDRSDRAM1111
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 1.0
中文描述: DDR SDRAM的规范版本1.0
文件页数: 20/53页
文件大小: 669K
代理商: DDRSDRAM1111
- 20 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.1 Burst Read Operation
Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the Burst read
command is issued by asserting CS and CAS low while holding RAS and WE high at the rising edge of the
clock(CK) after tRCD from the bank activation. The address inputs (A0~A9) determine the starting address for
the Burst. The Mode Register sets type of burst(Sequential or interleave) and burst length(2, 4, 8). The first
output data is available after the CAS Latency from the READ command, and the consecutive data are pre-
sented on the falling and rising edge of Data Strobe(DQS) adopted by DDR SDRAM until the burst length is
completed.
Command
< Burst Length=4, CAS Latency= 2, 2.5 >
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
s
CAS Latency=2
Dout 0 Dout 1 Dout 2 Dout 3
DQS
DQ
s
CAS Latency=2.5
Dout 0 Dout 1 Dout 2 Dout 3
2
0
1
5
3
4
8
6
7
t
RPRE
t
RPST
CK
CK
3.3 Essential Functionality for DDR SDRAM
The essential functionality that is required for the DDR SDRAM device is described in this chapter
Figure 9. Burst read operation timing
相关PDF资料
PDF描述
DDRSDRAM DDR SDRAM Specification Version 0.61
DDTA113TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DDTA114TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DDTA115TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DDTA123TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
相关代理商/技术参数
参数描述
DDR-SJE-Q2 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin
DDR-SJE-Q2R-1 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin
DDR-SJE-R1 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin
DDR-SJE-R2 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin
DDR-SJS-R1 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED AlInGaP