参数资料
型号: DDRSDRAM1111
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 1.0
中文描述: DDR SDRAM的规范版本1.0
文件页数: 21/53页
文件大小: 669K
代理商: DDRSDRAM1111
- 21 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.2 Burst Write Operation
The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising
edge of the clock(CK). The address inputs determine the starting column address. There is no write latency
relative to DQS required for burst write cycle. The first data of a burst write cycle must be applied on the DQ
pins tDS(Data-in setup time) prior to data strobe edge enabled after tDQSS from the rising edge of the
clock(CK) that the write command is issued. The remaining data inputs must be supplied on each subsequent
falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any
additional data supplied to the DQ pins will be ignored.
Figure 10. Burst write operation timing
1. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown
(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus.
If a previous write was in progress, DQS could be High at this time, depending on tDQSS.
*1
Command
< Burst Length=4 >
NOP
WRITEA
NOP
NOP
NOP
WRITEB
NOP
NOP
NOP
DQS
DQ
s
Din 3
Din 0 Din 1
Din 2
t
DQSSmax
2
0
1
5
3
4
8
6
7
t
WPRES*1
CK
CK
Din 3
Din 0
Din 1
Din 2
*1
相关PDF资料
PDF描述
DDRSDRAM DDR SDRAM Specification Version 0.61
DDTA113TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
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