参数资料
型号: DDRSDRAM1111
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 1.0
中文描述: DDR SDRAM的规范版本1.0
文件页数: 5/53页
文件大小: 669K
代理商: DDRSDRAM1111
- 5 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.7 Write Interrupted by a Read & DM
3.3.8 Write Interrupted by a Precharge & DM
3.3.9 Burst Stop
3.3.10 DM masking
3.3.11 Read With Auto Precharge
3.3.12 Write With Auto Precharge
3.3.13 Auto Refresh & Self Refresh
3.3.14 Power Down
4. Command Truth Table
5. Functional Truth Table
6. Absolute Maximum Rating
7. DC Operating Conditions & Specifications
7.1 DC Operating Conditions
7.2 DC Specifications
8. AC Operating Conditions & Timming Specification
8.1 AC Operating Conditions
8.2 AC Timming Parameters & Specification
9. AC Operating Test Conditions
10. Input/Output Capacitance
11. IBIS: I/V Characteristics for Input and Output Buffers
11.1 Normal strength driver
11.2 Half strength driver( will be included in the future)
12. QFC function
QFC definition
QFC timming on Read Operation
QFC timming on Write operation with tDQSSmax
QFC timming on Write operation with tDQSSmin
QFC timming example for interrupted writes operation
Timing Diagram
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相关PDF资料
PDF描述
DDRSDRAM DDR SDRAM Specification Version 0.61
DDTA113TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DDTA114TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DDTA115TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DDTA123TCA-7-F PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
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