参数资料
型号: E28F200BX-B60
厂商: INTEL CORP
元件分类: PROM
英文描述: 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 128K X 16 FLASH 12V PROM, 60 ns, PDSO56
封装: 20 X 14 MM, TSOP-56
文件页数: 10/48页
文件大小: 453K
代理商: E28F200BX-B60
28F200BX-TB 28F002BX-TB
28F002BX Products
The manufacturer and device codes are also read
via the CUI or by taking the A9 pin to 12V Writing
90
H to the CUI places the device into Intelligent
Identifier read mode A read of location 00000
H out-
puts the manufacturer’s identification code 89H
and location 00001
H outputs the device code 7CH
for 28F002BX-T 7DH for 28F002BX-B
44 Write Operations
Commands are written to the CUI using standard mi-
croprocessor write timings The CUl serves as the
interface between the microprocessor and the inter-
nal chip operation The CUI can decipher Read Ar-
ray Read Intelligent Identifier Read Status Register
Clear Status Register Erase and Program com-
mands In the event of a read command the CUI
simply points the read path at either the array the
intelligent identifier or the status register depending
on the specific read command given For a program
or erase cycle the CUI informs the write state ma-
chine that a write or erase has been requested Dur-
ing a program cycle the Write State Machine will
control the program sequences and the CUI will only
respond to status reads During an erase cycle the
CUI will respond to status reads and erase suspend
After the Write State Machine has completed its
task it will allow the CUI to respond to its full com-
mand set The CUI will stay in the current command
state until the microprocessor issues another com-
mand
The CUI will successfully initiate an erase or write
operation only when VPP is within its voltage range
Depending upon the application the system design-
er may choose to make the VPP power supply
switchable available only when memory updates
are desired The system designer can also choose
to ‘‘hard-wire’’ VPP to 12V The 2 Mbit boot block
flash family is designed to accommodate either de-
sign practice It is recommended that RP
be tied to
logical Reset for data protection during unstable
CPU reset function as described in the ‘‘Product
Family Overview’’ section
441 BOOT BLOCK WRITE OPERATIONS
In the case of Boot Block modifications (write and
erase) RP
is set to VHH e 12V typically in addi-
tion to VPP at high voltage However if RP
is not at
VHH when a program or erase operation of the boot
block is attempted the corresponding status register
bit (Bit 4 for Program and Bit 5 for Erase refer to
Table 5 for Status Register Definitions) is set to indi-
cate the failure to complete the operation
442 COMMAND USER INTERFACE (CUI)
The Command User Interface (CUI) serves as the
interface to the microprocessor The CUI points the
readwrite path to the appropriate circuit block as
described in the previous section After the WSM
has completed its task it will set the WSM Status bit
to a ‘‘1’’ which will also allow the CUI to respond to
its full command set Note that after the WSM has
returned control to the CUI the CUI will remain in its
current state
4421 Command Set
Command
Device Mode
Codes
00
InvalidReserved
10
Alternate Program Setup
20
Erase Setup
40
Program Setup
50
Clear Status Register
70
Read Status Register
90
Intelligent Identifier
B0
Erase Suspend
D0
Erase ResumeErase Confirm
FF
Read Array
4422 Command Function Descriptions
Device operations are selected by writing specific
commands into the CUI Table 4 defines the 2-Mbit
boot block flash family commands
18
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相关代理商/技术参数
参数描述
E28F200BX-B80 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F200BX-L150 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
E28F200BX-T120 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F200BX-T60 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F200BX-T80 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY