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参数资料
| 型号： | E28F200BX-T120 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 1/48页 |
| 文件大小： | 453K |
| 代理商： | E28F200BX-T120 |
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Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
November 1995
COPYRIGHT
INTEL CORPORATION 1995
Order Number 290448-005
2-MBIT (128K x 16 256K x 8)
BOOT BLOCK
FLASH MEMORY FAMILY
28F200BX-TB 28F002BX-TB
Y
x8x16 InputOutput Architecture
28F200BX-T 28F200BX-B
For High Performance and High
Integration 16-bit and 32-bit CPUs
Y
x8-only InputOutput Architecture
28F002BX-T 28F002BX-B
For Space Constrained 8-bit
Applications
Y
Upgradeable to Intel’s SmartVoltage
Products
Y
Optimized High-Density Blocked
Architecture
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
One 128 KB Main Block
Top or Bottom Boot Locations
Y
Extended Cycling Capability
100000 Block Erase Cycles
Y
Automated WordByte Write and
Block Erase
Command User Interface
Status Registers
Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Automatic Power Savings Feature
1 mA Typical ICC Active Current in
Static Operation
Y
Hardware Data Protection Feature
EraseWrite Lockout during Power
Transitions
Y
Very High-Performance Read
6080120 ns Maximum Access Time
304040 ns Maximum Output Enable
Time
Y
Low Power Consumption
20 mA Typical Active Read Current
Y
ResetDeep Power-Down Input
02 mAICC Typical
Acts as Reset for Boot Operations
Y
Extended Temperature Operation
b
40 Cto a85 C
Y
Write Protection for Boot Block
Y
Industry Standard Surface Mount
Packaging
28F200BX JEDEC ROM Compatible
44-Lead PSOP
56-Lead TSOP
28F002BX 40-Lead TSOP
Y
12V WordByte Write and Block Erase
VPP e 12V g5% Standard
VPP e 12V g10% Option
Y
ETOXTM III Flash Technology
5V Read
Y
Independent Software Vendor Support
相关PDF资料 |
PDF描述 |
|---|---|
| E28F002BX-T120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F320J5-120 | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| E28F400BX-B120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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