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参数资料
| 型号： | E28F200BX-T120 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 6/48页 |
| 文件大小： | 453K |
| 代理商： | E28F200BX-T120 |
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28F200BX-TB 28F002BX-TB
31 28F002BX Memory Organization
311 BLOCKING
The 28F002BX uses a blocked array architecture to
provide independent erasure of memory blocks A
block is erased independently of other blocks in the
array when an address is given within the block ad-
dress range and the Erase Setup and Erase Confirm
commands are written to the CUI The 28F002BX is
a random readwrite memory only erasure is per-
formed by block
3111 Boot Block Operation and Data
Protection
The 16-Kbyte boot block provides a lock feature for
secure code storage The intent of the boot block is
to provide a secure storage area for the kernel code
that is required to boot a system in the event of pow-
er failure or other disruption during code update
This lock feature ensures absolute data integrity by
preventing the boot block from being programmed
or erased when RP
is not at 12V The boot block
can be erased and programmed when RP
is held
at 12V for the duration of the erase or program oper-
ation This allows customers to change the boot
code when necessary while still providing security
when needed See the Block Memory Map section
for address locations of the boot block for the
28F002BX-T and 28F002BX-B
3112 Parameter Block Operation
The 28F002BX has 2 parameter blocks (8 Kbytes
each) The parameter blocks are intended to provide
storage for frequently updated system parameters
and configuration or diagnostic information The pa-
rameter blocks can also be used to store additional
boot or main code The parameter blocks however
do not have the hardware write protection feature
that the boot block has Parameter blocks provide
for more efficient memory utilization when dealing
with small parameter changes versus regularly
blocked devices See the Block Memory Map sec-
tion for address locations of the parameter blocks
for the 28F002BX-T and 28F002BX-B
3113 Main Block Operation
Two main blocks of memory exist on the 28F002BX
(1 x 128-Kbyte block and 1 x 96-Kbyte block) See
the following section on Block Memory Map for
address
location
of
these
blocks
for
the
28F002BX-T and 28F002BX-B
312 BLOCK MEMORY MAP
Two versions of the 28F002BX product exist to sup-
port two different memory maps of the array blocks
in order to accommodate different microprocessor
protocols for boot code location The 28F002BX-T
memory map is inverted from the 28F002BX-B
memory map
3121 28F002BX-B Memory Map
The 28F002BX-B device has the 16-Kbyte boot
block located from 00000H to 03FFFH to accommo-
date those microprocessors that boot from the bot-
tom of the address map at 00000H
In the
28F002BX-B the first 8-Kbyte parameter block re-
sides in memory from 04000H to 05FFFH The sec-
ond 8-Kbyte parameter block resides in memory
space from 06000H to 07FFFH The 96-Kbyte main
block resides in memory space from 08000H to
1FFFFH The 128-Kbyte main block resides in mem-
ory space from 20000H to 3FFFFH See Figure 10
3FFFFH
128-Kbyte MAIN BLOCK
1FFFFH
20000H
96-Kbyte MAIN BLOCK
07FFFH
08000H
8-Kbyte PARAMETER BLOCK
05FFFH
06000H
8-Kbyte PARAMETER BLOCK
03FFFH
04000H
16-Kbyte BOOT BLOCK
00000H
Figure 10 28F002BX-B Memory Map
14
相关PDF资料 |
PDF描述 |
|---|---|
| E28F002BX-T120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F320J5-120 | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| E28F400BX-B120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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