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参数资料
| 型号： | E28F200BX-T120 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 34/48页 |
| 文件大小： | 453K |
| 代理商： | E28F200BX-T120 |
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28F200BX-TB 28F002BX-TB
The Status Register (SR) indicates the status of the
WSM and whether the WSM successfully completed
the desired program or erase operation
Maximum Access Time of 60 ns (tACC) is achieved
over the commercial temperature range (0 Cto
70 C) 5% VCC supply voltage range (475V to
525V) and 30 pF output load Refer to Figure 19
tACC vs Output Load Capacitance for larger output
loads Maximum Access Time of 80 ns (tACC) is
achieved over the commercial temperature range
10% VCC supply range (45V to 55V) and 100 pF
output load
IPP maximum Program current is 40 mA for x16
operation and 30 mA for x8 operation IPP Erase
current is 30 mA maximum VPP erase and pro-
gramming voltage is 114V to 126V (VPP e 12V
g
5%) under all operating conditions
As an op-
tion VPP can also vary between 108V to 132V (VPP
e
12V g10%) with a guaranteed number of 100
block erase cycles
Typical ICC Active Current of 25 mA is achieved
for the x16 products (28F200BX) typical ICC Active
Current of 20 mA
is achieved for the x8 products
(28F200BX 28F002BX) Refer to the ICC active cur-
rent derating curves in this datasheet
The 2-Mbit boot block flash family is also designed
with an Automatic Power Savings (APS) feature to
minimize system battery current drain and allow for
very low power designs Once the device is ac-
cessed to read array data APS mode will immedi-
ately put the memory in static mode of operation
where ICC active current is typically 1 mA until the
next read is initiated
When the CE
and RP
pins are at VCC and the
BYTE
pin (28F200BX-only) is at either VCC or
GND the CMOS Standby mode is enabled where
ICC is typically 50 mA
A Deep Power-Down Mode is enabled when the
RP
pin is at ground minimizing power consumption
and providing write protection during power-up con-
ditions ICC current during deep power-down mode
is 020 mA typical An initial maximum access time
or Reset Time of 300 ns is required from RP
switching until outputs are valid Equivalently the
device has a maximum wake-up time of 215 ns until
writes to the Command User Interface are recog-
nized When RP
is at ground the WSM is reset the
Status Register is cleared and the entire device is
protected from being written to This feature pre-
vents data corruption and protects the code stored
in the device during system reset The system Reset
pin can be tied to RP
to reset the memory to nor-
mal read mode upon activation of the Reset pin
With on-chip programerase automation in the
2-Mbit family and the RP
functionality for data pro-
tection when the CPU is reset and even if a program
or erase command is issued the device will not rec-
ognize any operation until RP
returns to its normal
state
For the 28F200BX Byte-wide or Word-wide In-
putOutput Control
is possible by controlling the
BYTE
pin When the BYTE
pin is at a logic low
the device is in the byte-wide mode (x8) and data is
read and written through DQ 07
During the byte-
wide mode DQ 814 are tri-stated and DQ15Ab1
becomes the lowest order address pin When the
BYTE
pin is at a logic high the device is in the
word-wide mode (x16) and data is read and written
through DQ 015
13 Applications
The 2-Mbit boot block flash family combines high
density high performance cost-effective flash mem-
ories with blocking and hardware protection capabili-
ties Its flexibility and versatility will reduce costs
throughout the product life cycle Flash memory is
ideal for Just-In-Time production flow reducing sys-
tem inventory and costs and eliminating component
handling during the production phase During the
product life cycle when code updates or feature en-
hancements become necessary flash memory will
reduce the update costs by allowing either a user-
performed code change via floppy disk or a remote
code change via a serial link The 2-Mbit boot block
flash family provides full function blocked flash
memories suitable for a wide range of applications
These applications include Extended PC BIOS
Digital Cellular Phone
program and data storage
Telecommunication
bootfirmware
and various
other embedded applications where both program
and data storage are required
Reprogrammable systems such as personal com-
puters are ideal applications for the 2-Mbit flash
products Portable and handheld personal computer
applications are becoming more complex with the
addition of power management software to take ad-
vantage of the latest microprocessor technology
the availability of ROM-based application software
pen tablet code for electronic hand writing and diag-
nostic code
Figure 1 shows an example of a
28F200BX-T application
This increase in software sophistication augments
the probability that a code update will be required
after the PC is shipped The 2-Mbit flash products
provide an inexpensive update solution for the note-
book and handheld personal computers while ex-
tending their product lifetime
Furthermore
the
2-Mbit flash products’ power-down mode provides
added flexibility for these battery-operated portable
designs which require operation at very low power
levels
4
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PDF描述 |
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| E28F002BX-T120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F320J5-120 | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| E28F400BX-B120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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